Global Patent Index - EP 1019456 A1

EP 1019456 A1 2000-07-19 - POLISHING AGENT, METHOD FOR CHEMICAL AND MECHANICAL PLANISHING AND USE OF SAID POLISHING AGENT TO PLANISH A SEMICONDUCTOR SUBSTRATE

Title (en)

POLISHING AGENT, METHOD FOR CHEMICAL AND MECHANICAL PLANISHING AND USE OF SAID POLISHING AGENT TO PLANISH A SEMICONDUCTOR SUBSTRATE

Title (de)

POLIERMITTEL, VERFAHREN ZUM CHEMISCH-MECHANISCHEN PLANARISIEREN UND VERWENDUNG DES POLIERMITTELS ZUM PLANARISIEREN EINES HALBLEITERSUBSTRATS

Title (fr)

AGENT DE POLISSAGE, PROCEDE D'OBTENTION D'UNE PLANEITE PAR VOIE CHIMIQUE ET MECANIQUE ET UTILISATION DE L'AGENT DE POLISSAGE POUR LA PLANEITE D'UN SUBSTRAT SEMI-CONDUCTEUR

Publication

EP 1019456 A1 (DE)

Application

EP 98958172 A

Priority

  • DE 9802868 W
  • DE 19742634 A

Abstract (en)

[origin: WO9916843A1] The invention relates to a polishing agent which is comprised of a solution containing a chemically active constituent in addition to polishing grains suspended therein. The inventive polishing agent is characterised in that the pH value of the solution is at least 0.1 lower than the pKs value of the chemically active constituent. The invention also relates to a method for chemical and mechanical planishing, whereby a polishing agent comprised of a solution is introduced between a substrate to be planished and an abrasive disk moving in relation to the substrate, and said solution contains a chemically active component in addition to polishing grains suspended therein. The inventive method is characterised in that the pH value of the solution is reduced by at least 0.1 in comparison with the pKs value of the chemically active component. The invention also relates to the use of a polishing agent to planish a semiconductor substrate. The polishing agent is comprised of a solution containing a chemically active constituent in addition to polishing grains suspended therein. The polishing agent is characterised in that the pH value of the solution is at least 0.1 lower than the pKs value of the chemically active component.

IPC 1-7 (main, further and additional classification)

C09G 1/02; H01L 21/3105

IPC 8 full level (invention and additional information)

C09G 1/02 (2006.01); H01L 21/3105 (2006.01)

CPC (invention and additional information)

H01L 21/31053 (2013.01); C09G 1/02 (2013.01)

Citation (search report)

See references of WO 9916843A1

Designated contracting state (EPC)

DE

EPO simple patent family

WO 9916843 A1 19990408; EP 1019456 A1 20000719

INPADOC legal status


2003-03-19 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20020917

2002-01-02 [RTI1] TITLE (CORRECTION)

- Free text: METHOD FOR CHEMICAL AND MECHANICAL PLANISHING AND USE OF A POLISHING AGENT TO PLANISH A SEMICONDUCTOR SUBSTRATE

2001-01-03 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20001115

2000-07-19 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000317

2000-07-19 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE