EP 1019953 A1 20000719 - METHOD FOR THERMAL CURING OF IMPLANTATION-DOPED SILICON CARBIDE SEMICONDUCTORS
Title (en)
METHOD FOR THERMAL CURING OF IMPLANTATION-DOPED SILICON CARBIDE SEMICONDUCTORS
Title (de)
VERFAHREN ZUM THERMISCHEN AUSHEILEN VON DURCH IMPLANTATION DOTIERTEN SILIZIUMCARBID-HALBLEITERN
Title (fr)
PROCEDE DE CICATRISATION THERMIQUE POUR SEMI-CONDUCTEURS CONSTITUES DE CARBURE DE SILICIUM ET DOPES PAR IMPLANTATION
Publication
Application
Priority
- DE 9802722 W 19980914
- DE 19743127 A 19970930
Abstract (en)
[origin: WO9917345A1] An implantation-doped silicon carbide conductor (10i) is thermally cured in a gas flow (12) supplying practically no carbon to said conductor (10i).In one advantageous embodiment, the container (13), carrier (16), radiation shields (4,5) and the base plate (17) are made of metal or a metal compound, e.g. tantalum or tantalum carbide, at least in the places which come into contact with the gas flow (12).
IPC 1-7
IPC 8 full level
H01L 21/265 (2006.01); C30B 33/00 (2006.01); H01L 21/04 (2006.01); H01L 21/324 (2006.01)
CPC (source: EP US)
C30B 29/36 (2013.01 - EP US); C30B 33/00 (2013.01 - EP US); H01L 21/046 (2013.01 - EP US)
Designated contracting state (EPC)
CH DE FR IT LI SE
DOCDB simple family (publication)
WO 9917345 A1 19990408; CN 1272957 A 20001108; EP 1019953 A1 20000719; JP 2001518706 A 20011016; US 6406983 B1 20020618
DOCDB simple family (application)
DE 9802722 W 19980914; CN 98809723 A 19980914; EP 98955323 A 19980914; JP 2000514313 A 19980914; US 53879700 A 20000330