Global Patent Index - EP 1019953 A1

EP 1019953 A1 2000-07-19 - METHOD FOR THERMAL CURING OF IMPLANTATION-DOPED SILICON CARBIDE SEMICONDUCTORS

Title (en)

METHOD FOR THERMAL CURING OF IMPLANTATION-DOPED SILICON CARBIDE SEMICONDUCTORS

Title (de)

VERFAHREN ZUM THERMISCHEN AUSHEILEN VON DURCH IMPLANTATION DOTIERTEN SILIZIUMCARBID-HALBLEITERN

Title (fr)

PROCEDE DE CICATRISATION THERMIQUE POUR SEMI-CONDUCTEURS CONSTITUES DE CARBURE DE SILICIUM ET DOPES PAR IMPLANTATION

Publication

EP 1019953 A1 (DE)

Application

EP 98955323 A

Priority

  • DE 9802722 W
  • DE 19743127 A

Abstract (en)

[origin: WO9917345A1] An implantation-doped silicon carbide conductor (10i) is thermally cured in a gas flow (12) supplying practically no carbon to said conductor (10i).In one advantageous embodiment, the container (13), carrier (16), radiation shields (4,5) and the base plate (17) are made of metal or a metal compound, e.g. tantalum or tantalum carbide, at least in the places which come into contact with the gas flow (12).

IPC 1-7 (main, further and additional classification)

H01L 21/265; C30B 35/00; H01L 21/324

IPC 8 full level (invention and additional information)

H01L 21/265 (2006.01); C30B 33/00 (2006.01); H01L 21/04 (2006.01); H01L 21/324 (2006.01)

CPC (invention and additional information)

H01L 21/046 (2013.01); C30B 29/36 (2013.01); C30B 33/00 (2013.01)

Combination set (CPC)

C30B 33/00 + C30B 29/36

Citation (search report)

See references of WO 9917345A1

Designated contracting state (EPC)

CH DE FR IT LI SE

EPO simple patent family

WO 9917345 A1 19990408; CN 1272957 A 20001108; EP 1019953 A1 20000719; JP 2001518706 A 20011016; US 6406983 B1 20020618

INPADOC legal status


2008-06-04 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20071211

2007-07-04 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20030515

2003-07-02 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20030515

2000-07-19 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000317

2000-07-19 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): CH DE FR IT LI SE