EP 1019965 A1 20000719 - FIELD-EFFECT TRANSISTOR WITH HIGH PACKING DENSITY AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
FIELD-EFFECT TRANSISTOR WITH HIGH PACKING DENSITY AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
FELDEFFEKTTRANSISTOR HOHER PACKUNGSDICHTE UND VERFAHREN ZU SEINER HERSTELLUNG
Title (fr)
TRANSISTOR A EFFET DE CHAMP A DENSITE ELEVEE EN COMPOSANTS ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9802383 W 19980814
- DE 19743342 A 19970930
Abstract (en)
[origin: DE19743342A1] The invention relates to a field-effect transistor with a semiconductor body (1) having a main surface and at least one source region (6) and one drain region (7) and fitted with a gate electrode (10) separated from a channel area between the source region (6) and the drain region (7) by an insulator layer (8). The source region (6), the drain region (7) and the channel area in the inventive field-effect transistor are arranged in the walls of the corresponding grooves (3, 4, 5) provided in the semiconductor body (1).
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 21/76 (2006.01); H01L 21/8242 (2006.01); H01L 27/108 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP KR US)
H01L 29/0623 (2013.01 - KR); H01L 29/0692 (2013.01 - KR); H01L 29/41766 (2013.01 - EP KR US); H01L 29/4236 (2013.01 - EP KR US); H01L 29/4238 (2013.01 - KR); H01L 29/66621 (2013.01 - EP KR US); H01L 29/66636 (2013.01 - EP KR US); H01L 29/66659 (2013.01 - EP KR US); H01L 29/78 (2013.01 - EP US); H01L 29/7834 (2013.01 - EP KR US); H01L 29/7835 (2013.01 - EP KR US); H10B 12/37 (2023.02 - EP KR US); H01L 29/0623 (2013.01 - EP US); H01L 29/0692 (2013.01 - EP US); H01L 29/4238 (2013.01 - EP US)
Citation (search report)
See references of WO 9917370A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19743342 A1 19990408; DE 19743342 C2 20020228; EP 1019965 A1 20000719; JP 2001518715 A 20011016; KR 20010024356 A 20010326; TW 402822 B 20000821; US 6384456 B1 20020507; WO 9917370 A1 19990408
DOCDB simple family (application)
DE 19743342 A 19970930; DE 9802383 W 19980814; EP 98949904 A 19980814; JP 2000514335 A 19980814; KR 20007003455 A 20000330; TW 87114464 A 19980901; US 53879300 A 20000330