EP 1019967 A1 20000719 - SEMICONDUCTOR POWER COMPONENT WITH ENHANCED LATCH-UP RESISTANCE
Title (en)
SEMICONDUCTOR POWER COMPONENT WITH ENHANCED LATCH-UP RESISTANCE
Title (de)
HALBLEITER-LEISTUNGSBAUELEMENT MIT ERHÖHTER LATCH-UP-FESTIGKEIT
Title (fr)
COMPOSANT DE PUISSANCE A SEMI-CONDUCTEUR PRESENTANT UNE RESISTANCE ELEVEE AU VERROUILLAGE A L'ETAT PASSANT
Publication
Application
Priority
- DE 9802859 W 19980924
- DE 19743265 A 19970930
Abstract (en)
[origin: DE19743265A1] The invention relates to a semi-conductor power component with enhanced latch-up resistance as a result of suppression of a parasitic thyristor, comprising a first conduction type semi-conductor body (2) forming a base area, wherein a second conduction-type base area (3) is also provided. A charge carrier-recombination area (8) made of metal or polycrystalline silicon is embedded in the second base area (3), whereby a first conduction type highly doped area (9) is provided between the charge-carrier-recombination area (8) and the base area (2). Another insulation layer can be arranged below the second base area (3).
IPC 1-7
IPC 8 full level
H01L 29/749 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP)
H01L 27/0617 (2013.01); H01L 29/0649 (2013.01); H01L 29/7395 (2013.01); H01L 29/7396 (2013.01)
Citation (search report)
See references of WO 9917373A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19743265 A1 19990408; EP 1019967 A1 20000719; JP 2001518717 A 20011016; WO 9917373 A1 19990408
DOCDB simple family (application)
DE 19743265 A 19970930; DE 9802859 W 19980924; EP 98958170 A 19980924; JP 2000514338 A 19980924