EP 1021749 A1 20000726 - TECHNIQUES FOR FABRICATING AND PACKAGING MULTI-WAVELENGTH SEMICONDUCTOR LASER ARRAY DEVICES (CHIPS) AND THEIR APPLICATIONS IN SYSTEM ARCHITECTURES
Title (en)
TECHNIQUES FOR FABRICATING AND PACKAGING MULTI-WAVELENGTH SEMICONDUCTOR LASER ARRAY DEVICES (CHIPS) AND THEIR APPLICATIONS IN SYSTEM ARCHITECTURES
Title (de)
HERSTELLUNGS- UND EINKAPSELUNGSVERFAHREN VON MEHRWELLENLÄNGE- HALBLEITERLASERANORDNUNGEN (HALBLEITERCHIP) UND DEREN ANWENDUNGEN IN SYSTEMARCHITEKTUREN
Title (fr)
TECHNIQUES SERVANT A FABRIQUER ET A ENCAPSULER DES COMPOSANTS A SEMI-CONDUCTEURS A RESEAUX LASER ET LONGUEURS D'ONDES MULTIPLES (PUCES) ET LEURS MISES EN APPLICATION DANS DES ARCHITECTURES DE SYSTEMES
Publication
Application
Priority
- US 9819178 W 19980914
- US 5944697 P 19970922
- US 6356097 P 19971028
- US 3149698 A 19980226
Abstract (en)
[origin: WO9915934A1] Phase masks which can be used to make both linear and curved gratings of single or multiple submicron pitches, with or without any abrupt quarter-wavelength shifts (or gradually varying finer phase shifts) simultaneously on the wafer/substrate. The phase masks are made using direct write electron or ion-beam lithography of two times the required submicron pitches of linear and curved gratings on commercially available pi phase-shifting material on a quartz substrate and wet or dry etching of the pi phase-shifting material. The phase masks can be used in connection with making multi-wavelength laser diode chips. The laser diodes have a ridge structure with metal shoulders on either side of the ridge. The laser diode chip, with different wavelength lasers, is bonded and interfaced to a novel microwave substrate that allows for high signal-to-noise ratio and low crosstalk. The substrate is packaged in a low loss rugged housing for WDM applications.
IPC 1-7
G03F 7/00; G03F 1/00; G03F 9/00; H01L 23/02; H01S 3/00; H01S 3/19
IPC 8 full level
G02B 6/42 (2006.01); G03F 1/34 (2012.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01S 5/022 (2006.01); H01S 5/22 (2006.01); H01S 5/40 (2006.01); H01S 5/028 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2006.01); H01S 5/12 (2006.01); H01S 5/125 (2006.01); H01S 5/187 (2006.01)
CPC (source: EP US)
G02B 6/4249 (2013.01 - EP US); G02B 6/4277 (2013.01 - EP US); G03F 1/34 (2013.01 - EP US); H01S 5/04256 (2019.07 - EP US); G02B 6/4208 (2013.01 - EP US); G02B 6/424 (2013.01 - EP US); G02B 6/4271 (2013.01 - EP US); G02B 6/4279 (2013.01 - EP US); G02B 6/4283 (2013.01 - EP US); G02B 6/4286 (2013.01 - EP US); H01S 5/02216 (2013.01 - EP US); H01S 5/02251 (2021.01 - EP US); H01S 5/02325 (2021.01 - EP US); H01S 5/02345 (2021.01 - EP); H01S 5/02438 (2013.01 - EP US); H01S 5/028 (2013.01 - EP US); H01S 5/0282 (2013.01 - EP US); H01S 5/0421 (2013.01 - EP US); H01S 5/04252 (2019.07 - EP US); H01S 5/1082 (2013.01 - EP US); H01S 5/1215 (2013.01 - EP US); H01S 5/125 (2013.01 - EP US); H01S 5/187 (2013.01 - EP US); H01S 5/22 (2013.01 - EP US); H01S 5/4012 (2013.01 - EP US); H01S 5/4031 (2013.01 - EP US); H01S 5/4087 (2013.01 - EP US)
Citation (search report)
See references of WO 9915934A1
Designated contracting state (EPC)
DE FR GB IT NL SE
DOCDB simple family (publication)
WO 9915934 A1 19990401; CA 2304795 A1 19990401; EP 1021749 A1 20000726; JP 2001517866 A 20011009; US 2002028390 A1 20020307; US 6411642 B1 20020625
DOCDB simple family (application)
US 9819178 W 19980914; CA 2304795 A 19980914; EP 98953169 A 19980914; JP 2000513174 A 19980914; US 3149698 A 19980226; US 53720200 A 20000328