Global Patent Index - EP 1021749 A1

EP 1021749 A1 2000-07-26 - TECHNIQUES FOR FABRICATING AND PACKAGING MULTI-WAVELENGTH SEMICONDUCTOR LASER ARRAY DEVICES (CHIPS) AND THEIR APPLICATIONS IN SYSTEM ARCHITECTURES

Title (en)

TECHNIQUES FOR FABRICATING AND PACKAGING MULTI-WAVELENGTH SEMICONDUCTOR LASER ARRAY DEVICES (CHIPS) AND THEIR APPLICATIONS IN SYSTEM ARCHITECTURES

Title (de)

HERSTELLUNGS- UND EINKAPSELUNGSVERFAHREN VON MEHRWELLENLÄNGE- HALBLEITERLASERANORDNUNGEN (HALBLEITERCHIP) UND DEREN ANWENDUNGEN IN SYSTEMARCHITEKTUREN

Title (fr)

TECHNIQUES SERVANT A FABRIQUER ET A ENCAPSULER DES COMPOSANTS A SEMI-CONDUCTEURS A RESEAUX LASER ET LONGUEURS D'ONDES MULTIPLES (PUCES) ET LEURS MISES EN APPLICATION DANS DES ARCHITECTURES DE SYSTEMES

Publication

EP 1021749 A1 (EN)

Application

EP 98953169 A

Priority

  • US 9819178 W
  • US 5944697 P
  • US 6356097 P
  • US 3149698 A

Abstract (en)

[origin: WO9915934A1] Phase masks which can be used to make both linear and curved gratings of single or multiple submicron pitches, with or without any abrupt quarter-wavelength shifts (or gradually varying finer phase shifts) simultaneously on the wafer/substrate. The phase masks are made using direct write electron or ion-beam lithography of two times the required submicron pitches of linear and curved gratings on commercially available pi phase-shifting material on a quartz substrate and wet or dry etching of the pi phase-shifting material. The phase masks can be used in connection with making multi-wavelength laser diode chips. The laser diodes have a ridge structure with metal shoulders on either side of the ridge. The laser diode chip, with different wavelength lasers, is bonded and interfaced to a novel microwave substrate that allows for high signal-to-noise ratio and low crosstalk. The substrate is packaged in a low loss rugged housing for WDM applications.

IPC 1-7 (main, further and additional classification)

G03F 7/00; G03F 1/00; G03F 9/00; H01L 23/02; H01S 3/00; H01S 3/19

IPC 8 full level (invention and additional information)

G02B 6/42 (2006.01); G03F 1/34 (2012.01); G03F 7/20 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01S 5/022 (2006.01); H01S 5/22 (2006.01); H01S 5/40 (2006.01); H01S 5/028 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2006.01); H01S 5/12 (2006.01); H01S 5/125 (2006.01); H01S 5/187 (2006.01)

CPC (invention and additional information)

G03F 1/34 (2013.01); G02B 6/4249 (2013.01); G02B 6/4277 (2013.01); G02B 6/4208 (2013.01); G02B 6/424 (2013.01); G02B 6/4271 (2013.01); G02B 6/4279 (2013.01); G02B 6/4283 (2013.01); G02B 6/4286 (2013.01); H01S 5/02216 (2013.01); H01S 5/02248 (2013.01); H01S 5/02284 (2013.01); H01S 5/02438 (2013.01); H01S 5/028 (2013.01); H01S 5/0282 (2013.01); H01S 5/0421 (2013.01); H01S 5/0425 (2013.01); H01S 5/1082 (2013.01); H01S 5/1215 (2013.01); H01S 5/125 (2013.01); H01S 5/187 (2013.01); H01S 5/22 (2013.01); H01S 5/4012 (2013.01); H01S 5/4031 (2013.01); H01S 5/4087 (2013.01)

Designated contracting state (EPC)

DE FR GB IT NL SE

EPO simple patent family

WO 9915934 A1 19990401; CA 2304795 A1 19990401; EP 1021749 A1 20000726; JP 2001517866 A 20011009; US 2002028390 A1 20020307; US 6411642 B1 20020625

INPADOC legal status


2003-01-15 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20020402

2000-07-26 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000418

2000-07-26 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR GB IT NL SE