EP 1022786 B1 20101013 - Semiconductor device and process for production thereof
Title (en)
Semiconductor device and process for production thereof
Title (de)
Halbleitervorrichtung und deren Herstellungsverfahren
Title (fr)
Dispositif semi-conducteur et son procédé de fabrication
Publication
Application
Priority
JP 1327599 A 19990121
Abstract (en)
[origin: EP1022786A2] Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area. <IMAGE>
IPC 8 full level
H01L 29/786 (2006.01); G02F 1/1362 (2006.01); H01L 21/77 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/04 (2006.01); G02F 1/1368 (2006.01); H01L 27/13 (2006.01); H01L 27/32 (2006.01)
CPC (source: EP KR US)
G02F 1/13454 (2013.01 - KR); G02F 1/136209 (2013.01 - KR); G02F 1/136213 (2013.01 - EP KR US); G02F 1/136227 (2013.01 - KR); G02F 1/136277 (2013.01 - KR); G02F 1/1368 (2013.01 - KR); H01L 27/1214 (2013.01 - KR); H01L 27/1237 (2013.01 - EP KR US); H01L 27/124 (2013.01 - EP US); H01L 27/1255 (2013.01 - EP US); H01L 27/13 (2013.01 - KR); H01L 29/78633 (2013.01 - EP KR US); G02F 1/13454 (2013.01 - EP US); G02F 1/136209 (2013.01 - EP US); G02F 1/136227 (2013.01 - EP US); G02F 1/136245 (2021.01 - EP US); G02F 1/136277 (2013.01 - EP US); G02F 1/1368 (2013.01 - EP US); H01L 29/78645 (2013.01 - EP US); H10K 59/12 (2023.02 - EP KR US)
Citation (examination)
JP H04219736 A 19920810 - SHARP KK
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 1022786 A2 20000726; EP 1022786 A3 20040714; EP 1022786 B1 20101013; DE 60045088 D1 20101125; KR 100652817 B1 20061201; KR 100652821 B1 20061201; KR 20000057776 A 20000925; KR 20050013175 A 20050202; US 2004065882 A1 20040408; US 2005253149 A1 20051117; US 2007194362 A1 20070823; US 2009057670 A1 20090305; US 6590229 B1 20030708; US 6890784 B2 20050510; US 7208766 B2 20070424; US 7414267 B2 20080819; US 7727836 B2 20100601
DOCDB simple family (application)
EP 00101189 A 20000121; DE 60045088 T 20000121; KR 20000002554 A 20000120; KR 20050004450 A 20050118; US 12017505 A 20050502; US 19390008 A 20080819; US 45303403 A 20030603; US 48743200 A 20000119; US 73859907 A 20070423