EP 1024369 A1 20000802 - Characterization of a semiconductor-dielectric interface by photocurrent measurements
Title (en)
Characterization of a semiconductor-dielectric interface by photocurrent measurements
Title (de)
Charakterisierung einer Halbleiter-Dielektrikum-Grenzschicht mittels Photostrom-Messungen
Title (fr)
Caractérisation d'une interface semi-conducteur-diélectrique par mesure de photocourants
Publication
Application
Priority
EP 99830030 A 19990126
Abstract (en)
In a method for characterizing a semiconductor/substrate/dielectric layer interface through measurements of a photocurrent induced in the semiconductor by scanning a certain area of the interface with a laser beam and collected by way of a Schottky contact established by inversely biasing in respect to the potential of the bulk of the semiconductor substrate an electrolyte capable of etching any native or thermal oxide that may exist on the contact area with the semiconductor substrate, the surface potential of the semiconductor/dielectric interface is controlled by means of a gate electrode established on the dielectric layer by way of a second electrolyte not aggressive of the dielectric material and biased by an electrode immersed in the second electrolyte in respect to the potential of the bulk of the semiconductor substrate. <IMAGE>
IPC 1-7
IPC 8 full level
G01R 31/26 (2014.01); G01R 31/265 (2006.01); H01L 21/66 (2006.01)
CPC (source: EP US)
G01R 31/2648 (2013.01 - EP US); G01R 31/2656 (2013.01 - EP US); H01L 22/14 (2013.01 - EP US)
Citation (search report)
- [A] US 5130643 A 19920714 - FOELL HELMUT [DE], et al
- [A] US 4420497 A 19831213 - TICKLE ANDREW C [US]
- [A] US 4433288 A 19840221 - MOORE ARNOLD R [US]
- [DA] V. LEHMANN ET AL.: "Minority carrier diffusion length mapping in silicon wafers using a Si-electrolyte-contact", JOURNAL OF THE ELECTROCHEMICAL SOCIETY., vol. 135, no. 11, November 1988 (1988-11-01), MANCHESTER, NEW HAMPSHIRE US, pages 2831 - 2835, XP002107593
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 1024369 A1 20000802; EP 1024369 B1 20041020; DE 69921286 D1 20041125; US 6437592 B1 20020820
DOCDB simple family (application)
EP 99830030 A 19990126; DE 69921286 T 19990126; US 49194500 A 20000126