EP 1025041 A1 20000809 - METHOD FOR FABRICATING SILICON OXYNITRIDE
Title (en)
METHOD FOR FABRICATING SILICON OXYNITRIDE
Title (de)
VERFAHREN ZUR HERSTELLUNG VON SILIZIUMOXYNITRID
Title (fr)
PROCEDE DE FABRICATION D'OXYNITRURE DE SILICIUM
Publication
Application
Priority
- US 9816358 W 19980805
- US 5724197 P 19970829
Abstract (en)
[origin: WO9911573A1] A method for making silicon oxynitride comprising providing a vaporous gas stream of a compound selected from the group consisting of silazanes and siloxazanes. An enclosed, heated reaction site is also provided. The vaporous gas stream is delivered to the enclosed, heated reaction site in which the levels of oxygen are strictly controlled to promote the formation of silicon oxynitride particles.
IPC 1-7
IPC 8 full level
C01B 21/082 (2006.01); C23C 16/30 (2006.01)
CPC (source: EP KR)
C01B 15/14 (2013.01 - KR); C01B 21/0823 (2013.01 - EP); C23C 16/308 (2013.01 - EP)
Citation (search report)
See references of WO 9911573A1
Designated contracting state (EPC)
DE FR GB IT NL
DOCDB simple family (publication)
WO 9911573 A1 19990311; AU 731687 B2 20010405; AU 8694298 A 19990322; BR 9811384 A 20000829; CA 2297329 A1 19990311; CN 1268099 A 20000927; EP 1025041 A1 20000809; ID 24748 A 20000803; JP 2001514151 A 20010911; KR 20010023452 A 20010326; TW 509660 B 20021111
DOCDB simple family (application)
US 9816358 W 19980805; AU 8694298 A 19980805; BR 9811384 A 19980805; CA 2297329 A 19980805; CN 98808408 A 19980805; EP 98938414 A 19980805; ID 20000597 A 19980805; JP 2000508620 A 19980805; KR 20007002095 A 20000228; TW 87114318 A 19980827