Global Patent Index - EP 1025449 A4

EP 1025449 A4 20030402 - ELECTRON DEVICES FOR SINGLE ELECTRON AND NUCLEAR SPIN MEASUREMENT

Title (en)

ELECTRON DEVICES FOR SINGLE ELECTRON AND NUCLEAR SPIN MEASUREMENT

Title (de)

ELEKTRON-GERÄTE FÜR DIE SPIN-MESSUNG VON EINEM EINZELNEN ELEKTRON UND VON KERNEN

Title (fr)

DISPOSITIFS ELECTRONIQUES PERMETTANT DE MESURER LE SPIN UNIQUE D'UN ELECTRON ET D'UN NOYAU

Publication

EP 1025449 A4 20030402 (EN)

Application

EP 98944894 A 19980917

Priority

  • AU 9800778 W 19980917
  • AU PO926897 A 19970917

Abstract (en)

[origin: WO9914614A1] An electron device for single spin measurement, comprising: a semiconductor substrate into which at least one donor atom is introduced to produce a donor nuclear spin electron system having large electron wave functions at the nucleus of the donor atom. An insulating layer above the substrate. A first conducting gate on the insulating layer above the donor atom to control the energy of the bound electron state at the donor. A second conducting gate on the insulating layer adjacent the first gate to generate at least one additional electron in the substrate. In use, a single electron is bound to the donor, and the donor atom is weakly coupled to the additional electron(s) in the substrate. The gates are biased so that the additional electron(s) in the substrate will move to the donor, but only if the spins of the electrons and the donor electron or nucleus are in a relationship which permits the movement.

IPC 1-7

G01R 33/20; H01L 41/12; H01L 49/00; H03K 19/08; G06F 7/00; H01L 29/76

IPC 8 full level

G01N 24/00 (2006.01); G06F 7/00 (2006.01); G06N 1/00 (2006.01); G06N 99/00 (2010.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/76 (2006.01)

CPC (source: EP KR US)

B82Y 10/00 (2013.01 - EP US); G06N 10/00 (2018.12 - EP US); H01L 29/7613 (2013.01 - EP US); H01L 29/772 (2013.01 - KR); H01L 29/775 (2013.01 - KR); Y10S 977/933 (2013.01 - EP US)

Citation (search report)

  • [A] US 5608231 A 19970304 - UGAJIN RYUICHI [JP], et al
  • [L] JAMIESON D N ET AL: "A role for ion implantation in quantum computing", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - B: BEAM INTERACTIONS WITH MATERIALS AND ATOMS, NORTH-HOLLAND PUBLISHING COMPANY. AMSTERDAM, NL, vol. 175-177, April 2001 (2001-04-01), pages 744 - 750, XP004242731, ISSN: 0168-583X
  • [L] NG J ET AL: "Introduction to solid-state quantum computation for engineers", MICROELECTRONICS JOURNAL, MACKINTOSH PUBLICATIONS LTD. LUTON, GB, vol. 33, no. 1-2, 2 January 2002 (2002-01-02), pages 171 - 177, XP004329617, ISSN: 0026-2692
  • [PX] KANE B E: "A SILICON-BASED NUCLEAR SPIN QUANTUM COMPUTER", NATURE, MACMILLAN JOURNALS LTD. LONDON, GB, vol. 393, no. 6681, 1998, pages 133 - 137, XP000907134, ISSN: 0028-0836
  • See references of WO 9914614A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

WO 9914614 A1 19990325; AU PO926897 A0 19971009; CA 2304045 A1 19990325; CA 2304185 A1 19990325; CN 1132016 C 20031224; CN 1135700 C 20040121; CN 1270674 A 20001018; CN 1278967 A 20010103; EP 1016216 A1 20000705; EP 1016216 A4 20020508; EP 1025449 A1 20000809; EP 1025449 A4 20030402; IL 134920 A0 20010520; IL 134920 A 20031123; IL 135062 A0 20010520; IN 192584 B 20040508; JP 2001516962 A 20011002; JP 2001516974 A 20011002; JP 4819993 B2 20111124; JP 4819994 B2 20111124; KR 20010030600 A 20010416; KR 20010030601 A 20010416; TW 423028 B 20010221; TW 423046 B 20010221; US 6369404 B1 20020409; US 6472681 B1 20021029; WO 9914858 A1 19990325; ZA 988528 B 19990318; ZA 988530 B 19990318

DOCDB simple family (application)

AU 9800778 W 19980917; AU 9800777 W 19980917; AU PO926897 A 19970917; CA 2304045 A 19980917; CA 2304185 A 19980917; CN 98809240 A 19980917; CN 98811165 A 19980917; EP 98943573 A 19980917; EP 98944894 A 19980917; IL 13492098 A 19980917; IL 13506298 A 19980917; IN 1666CA1998 A 19980917; JP 2000512096 A 19980917; JP 2000512288 A 19980917; KR 20007002707 A 20000315; KR 20007002708 A 20000315; TW 87115549 A 19981106; TW 87115550 A 19981106; US 48632900 A 20000623; US 48641400 A 20000623; ZA 988528 A 19980917; ZA 988530 A 19980917