EP 1026725 A2 20000809 - Manufacturing method for a semiconductor device
Title (en)
Manufacturing method for a semiconductor device
Title (de)
Herstellungsverfahren für eine Halbleitervorrichtung
Title (fr)
Méthode de fabrication pour un dispositif semiconducteur
Publication
Application
Priority
JP 2865799 A 19990205
Abstract (en)
A manufacturing method for a semiconductor device is provided with the steps of: semi-full dicing a semiconductor wafer so as to leave a dicing residual portion with a predetermined thickness between devices on the semiconductor wafer; forming a protective layer having a chemical etching resistant property on an element formation face of the semiconductor wafer; chemically etching the semiconductor wafer having the protective layer formed on the element formation face from the rear face side so as to polish the rear face of the semiconductor wafer, so as to remove the dicing residual portion to divide the semiconductor wafer into individual semiconductor chips, and so as to remove damaged areas in a cut face of the semiconductor wafer resulted from the semi-full dicing process. Thus, it becomes possible to reduce the number of processes, and also to carry out a polishing process and a dicing process safely without giving damages to the semiconductor wafer and without causing cracks and chips therein. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/301 (2006.01); H01L 21/306 (2006.01); H01L 21/68 (2006.01); H01L 21/78 (2006.01)
CPC (source: EP US)
H01L 21/6835 (2013.01 - EP US); H01L 21/6836 (2013.01 - EP US); H01L 21/78 (2013.01 - EP US); H01L 21/30604 (2013.01 - EP US); H01L 21/30625 (2013.01 - EP US); H01L 2221/68327 (2013.01 - EP US); H01L 2221/6834 (2013.01 - EP US)
Citation (examination)
- JP H0722358 A 19950124 - SHARP KK
- EP 0828292 A1 19980311 - HITACHI LTD [JP]
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1026725 A2 20000809; EP 1026725 A3 20030115; JP 2000228389 A 20000815; JP 3447602 B2 20030916; US 6730579 B1 20040504
DOCDB simple family (application)
EP 00300389 A 20000119; JP 2865799 A 19990205; US 48725900 A 20000119