EP 1029358 A1 20000823 - HIGH VOLTAGE RESISTANT EDGE STRUCTURE FOR SEMICONDUCTOR ELEMENTS
Title (en)
HIGH VOLTAGE RESISTANT EDGE STRUCTURE FOR SEMICONDUCTOR ELEMENTS
Title (de)
HOCHSPANNUNGSFESTE RANDSTRUKTUR FÜR HALBLEITERBAUELEMENTE
Title (fr)
STRUCTURE MARGINALE RESISTANT AUX HAUTES TENSIONS POUR ELEMENTS SEMI-CONDUCTEURS
Publication
Application
Priority
- DE 9803197 W 19981102
- DE 19748524 A 19971103
Abstract (en)
[origin: WO9923703A1] The invention relates to a high voltage resistant edge structure in the edge area of a semiconductor element, comprising floating guard rings of a first conductivity type and intermediate ring areas of a second conductivity type arranged between said floating guard rings. The conductivity and/or geometry of the floating guard rings and/or intermediate ring areas is adjusted in such a way that the charge carriers are fully cleared when a blocking voltage is applied. The inventive edge structure enables the electrical field to be modulated on both the surface and in the volume of the semiconductor body. By dimensioning the inventive edge structure in an appropriate manner, maximum field intensity can be applied depthwise in a simple manner i.e. in the vertical pn transition area. An appropriate edge structure enabling a "soft" volume electrical-field run out to be continuously obtained by means of an extensive p and n doped concentration area.
IPC 1-7
IPC 8 full level
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01)
CPC (source: EP US)
H01L 29/0634 (2013.01 - EP US); H01L 29/7811 (2013.01 - EP US); H01L 29/41766 (2013.01 - EP US); H01L 29/7395 (2013.01 - EP US); H01L 29/7396 (2013.01 - EP US); H01L 29/7802 (2013.01 - EP US)
Citation (search report)
See references of WO 9923703A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
WO 9923703 A1 19990514; WO 9923703 A9 19990902; EP 1029358 A1 20000823; JP 2001522145 A 20011113; JP 3628613 B2 20050316; US 6870201 B1 20050322
DOCDB simple family (application)
DE 9803197 W 19981102; EP 98962198 A 19981102; JP 2000519469 A 19981102; US 53055300 A 20000721