Global patent index - EP 1029358 A1

EP 1029358 A1 2000-08-23 - HIGH VOLTAGE RESISTANT EDGE STRUCTURE FOR SEMICONDUCTOR ELEMENTS

Title (en)

HIGH VOLTAGE RESISTANT EDGE STRUCTURE FOR SEMICONDUCTOR ELEMENTS

Title (de)

HOCHSPANNUNGSFESTE RANDSTRUKTUR FÜR HALBLEITERBAUELEMENTE

Title (fr)

STRUCTURE MARGINALE RESISTANT AUX HAUTES TENSIONS POUR ELEMENTS SEMI-CONDUCTEURS

Publication

EP 1029358 A1 (DE)

Application

EP 98962198 A

Priority

  • DE 9803197 W
  • DE 19748524 A

Abstract (en)

[origin: WO9923703A1] The invention relates to a high voltage resistant edge structure in the edge area of a semiconductor element, comprising floating guard rings of a first conductivity type and intermediate ring areas of a second conductivity type arranged between said floating guard rings. The conductivity and/or geometry of the floating guard rings and/or intermediate ring areas is adjusted in such a way that the charge carriers are fully cleared when a blocking voltage is applied. The inventive edge structure enables the electrical field to be modulated on both the surface and in the volume of the semiconductor body. By dimensioning the inventive edge structure in an appropriate manner, maximum field intensity can be applied depthwise in a simple manner i.e. in the vertical pn transition area. An appropriate edge structure enabling a "soft" volume electrical-field run out to be continuously obtained by means of an extensive p and n doped concentration area.

IPC 1-7 (main, further and additional classification)

H01L 29/06; H01L 29/739; H01L 29/78

IPC 8 full level (invention and additional information)

H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/739 (2006.01)

CPC (invention and additional information)

H01L 29/0634 (2013.01); H01L 29/41766 (2013.01); H01L 29/7395 (2013.01); H01L 29/7396 (2013.01); H01L 29/7802 (2013.01)

Citation (search report)

See references of WO 9923703A1

Designated contracting state (EPC)

DE FR GB IE IT

EPO simple patent family

WO 9923703 A1 19990514; WO 9923703 A9 19990902; EP 1029358 A1 20000823; JP 2001522145 A 20011113; JP 3628613 B2 20050316; US 6870201 B1 20050322

INPADOC legal status

2009-10-07 [18R] REFUSED

- Ref Legal Event Code: 18R

- Effective date: 20090716

2003-04-02 [17Q] FIRST EXAMINATION REPORT

- Ref Legal Event Code: 17Q

- Effective date: 20030217

2000-08-23 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 20000417

2000-08-23 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE FR GB IE IT