Global Patent Index - EP 1029371 A1

EP 1029371 A1 2000-08-23 - CONSTRUCTION WITH HIGH T c? SUPERCONDUCTOR MATERIAL AND METHOD FOR PRODUCING SAID CONSTRUCTION

Title (en)

CONSTRUCTION WITH HIGH T c? SUPERCONDUCTOR MATERIAL AND METHOD FOR PRODUCING SAID CONSTRUCTION

Title (de)

AUFBAU MIT HOCH-T c?-SUPRALEITERMATERIAL SOWIE VERFAHREN ZUR HERSTELLUNG DES AUFBAUS

Title (fr)

STRUCTURE COMPORTANT UN MATERIAU SUPRACONDUCTEUR A HAUTE TEMPERATURE DE TRANSITION, ET PROCEDE DE PRODUCTION DE CETTE STRUCTURE

Publication

EP 1029371 A1 (DE)

Application

EP 98959754 A

Priority

  • DE 9803107 W
  • DE 19748483 A

Abstract (en)

[origin: DE19748483C1] In a metal oxide high critical temperature (Tc) superconductor material structure having an interlayer between an insulating substrate and a buffer layer supporting a superconductor material layer, the interlayer forms a composite body with the substrate and consists of a glass material which resists the maximum temperature occurring during structure production and which has a thermal expansion coefficient of greater than 6\*10<-6> K<-1>. An Independent claim is also included for a process for producing the above structure in which the maximum substrate temperature, during deposition of the buffer layer and/or the superconductor layer, is \}150 (preferably \}100) K higher than the transition temperature of the glass material.

IPC 1-7 (main, further and additional classification)

H01L 39/24

IPC 8 full level (invention and additional information)

C03C 17/34 (2006.01); C04B 41/52 (2006.01); C04B 41/89 (2006.01); C23C 14/02 (2006.01); C23C 14/08 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); H01L 39/02 (2006.01); H01L 39/16 (2006.01); H01L 39/24 (2006.01); H01M 12/06 (2006.01)

CPC (invention and additional information)

C23C 16/0272 (2013.01); C03C 17/3411 (2013.01); C04B 41/52 (2013.01); C04B 41/89 (2013.01); C23C 14/024 (2013.01); C23C 14/087 (2013.01); C23C 16/408 (2013.01); H01L 39/16 (2013.01); H01L 39/2461 (2013.01)

Citation (search report)

See references of WO 9923707A1

Designated contracting state (EPC)

CH DE FR GB IT LI

EPO simple patent family

DE 19748483 C1 19990304; CA 2308480 A1 19990514; EP 1029371 A1 20000823; JP 2001522148 A 20011113; US 6391828 B1 20020521; WO 9923707 A1 19990514

INPADOC legal status


2003-11-05 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20030503

2000-08-23 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000417

2000-08-23 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): CH DE FR GB IT LI