EP 1029371 A1 20000823 - CONSTRUCTION WITH HIGH T c? SUPERCONDUCTOR MATERIAL AND METHOD FOR PRODUCING SAID CONSTRUCTION
Title (en)
CONSTRUCTION WITH HIGH T c? SUPERCONDUCTOR MATERIAL AND METHOD FOR PRODUCING SAID CONSTRUCTION
Title (de)
AUFBAU MIT HOCH-T c?-SUPRALEITERMATERIAL SOWIE VERFAHREN ZUR HERSTELLUNG DES AUFBAUS
Title (fr)
STRUCTURE COMPORTANT UN MATERIAU SUPRACONDUCTEUR A HAUTE TEMPERATURE DE TRANSITION, ET PROCEDE DE PRODUCTION DE CETTE STRUCTURE
Publication
Application
Priority
- DE 9803107 W 19981022
- DE 19748483 A 19971104
Abstract (en)
[origin: DE19748483C1] In a metal oxide high critical temperature (Tc) superconductor material structure having an interlayer between an insulating substrate and a buffer layer supporting a superconductor material layer, the interlayer forms a composite body with the substrate and consists of a glass material which resists the maximum temperature occurring during structure production and which has a thermal expansion coefficient of greater than 6\*10<-6> K<-1>. An Independent claim is also included for a process for producing the above structure in which the maximum substrate temperature, during deposition of the buffer layer and/or the superconductor layer, is \}150 (preferably \}100) K higher than the transition temperature of the glass material.
IPC 1-7
IPC 8 full level
C03C 17/34 (2006.01); C04B 41/52 (2006.01); C04B 41/89 (2006.01); C23C 14/02 (2006.01); C23C 14/08 (2006.01); C23C 16/02 (2006.01); C23C 16/40 (2006.01); H01L 39/02 (2006.01); H01L 39/16 (2006.01); H01L 39/24 (2006.01); H01M 12/06 (2006.01)
CPC (source: EP US)
C03C 17/3411 (2013.01 - EP US); C04B 41/52 (2013.01 - EP US); C04B 41/89 (2013.01 - EP US); C23C 14/024 (2013.01 - EP US); C23C 14/087 (2013.01 - EP US); C23C 16/0272 (2013.01 - EP US); C23C 16/408 (2013.01 - EP US); H10N 60/0632 (2023.02 - EP US); H10N 60/30 (2023.02 - EP US)
Citation (search report)
See references of WO 9923707A1
Designated contracting state (EPC)
CH DE FR GB IT LI
DOCDB simple family (publication)
DE 19748483 C1 19990304; CA 2308480 A1 19990514; EP 1029371 A1 20000823; JP 2001522148 A 20011113; US 6391828 B1 20020521; WO 9923707 A1 19990514
DOCDB simple family (application)
DE 19748483 A 19971104; CA 2308480 A 19981022; DE 9803107 W 19981022; EP 98959754 A 19981022; JP 2000519473 A 19981022; US 56467100 A 20000504