EP 1032615 A1 20000906 - PROCESS FOR PREPARING METAL OXIDE SLURRY SUITABLE FOR SEMICONDUCTOR CHEMICAL MECHANICAL POLISHING
Title (en)
PROCESS FOR PREPARING METAL OXIDE SLURRY SUITABLE FOR SEMICONDUCTOR CHEMICAL MECHANICAL POLISHING
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER METALLOXYD-SUSPENSION ZUM CHEMISCH-MECHANISCHEN POLIEREN VON HALBLEITERN
Title (fr)
PROCEDE PERMETTANT LA PREPARATION D'UNE SUSPENSION D'OXYDE METALLIQUE SERVANT AU POLISSAGE MECANIQUE DES SEMI-CONDUCTEURS
Publication
Application
Priority
- KR 9900123 W 19990319
- KR 19980039212 A 19980922
Abstract (en)
[origin: WO0017282A1] There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of mu -scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and intermetal dielectrics through a CMP process.
IPC 1-7
IPC 8 full level
C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/304 (2006.01)
CPC (source: EP KR)
C09G 1/02 (2013.01 - EP); C09K 3/1463 (2013.01 - EP); H01L 21/304 (2013.01 - KR)
Citation (search report)
See references of WO 0017282A1
Designated contracting state (EPC)
DE GB NL
DOCDB simple family (publication)
WO 0017282 A1 20000330; CN 1113945 C 20030709; CN 1268967 A 20001004; EP 1032615 A1 20000906; JP 2002526593 A 20020820; KR 20000006595 A 20000207; TW 440603 B 20010616
DOCDB simple family (application)
KR 9900123 W 19990319; CN 99800657 A 19990319; EP 99909365 A 19990319; JP 2000574185 A 19990319; KR 19980039212 A 19980922; TW 88115383 A 19990907