Global Patent Index - EP 1035229 A1

EP 1035229 A1 2000-09-13 - Rhodium bath and process for rhodium deposition

Title (en)

Rhodium bath and process for rhodium deposition

Title (de)

Rhodiumbad und Verfahren zum Abscheiden von Rhodium

Title (fr)

Bain de rhodium et procédè pour le dépôt du rhodium

Publication

EP 1035229 A1 (DE)

Application

EP 00103134 A

Priority

DE 19909678 A

Abstract (en)

[origin: DE19909678C1] Rhodium plating bath comprises water and a readily water-soluble rhodium compound selected from ammonium rhodium(III) di(pyridine-2,6-dicarboxylate), rhodium amine complexes, rhodium acetate and rhodium chloride triethylenetetramine or diethylenetriamine complexes. Rhodium plating bath comprises water and a readily water-soluble rhodium compound selected from ammonium rodium(III) di(pyridine-2,6-dicarboxylate), rhodium amine complexes of formula (I), rhodium acetate and rhodium chloride triethylenetetramine or diethylenetriamine complexes: RuClx(NH3)6-x (I) x = 0-3.

Abstract (de)

Es wird ein Rhodiumbad und ein Abscheideverfahren von Rhodium auf einem Substrat mit einer hohen Badausbeute vorgeschlagen, das sich insbesondere zum stromlosen Abscheiden von Rhodium auf weitgehend beliebigen Substraten eignet. Das Bad enthält mindestens eine gut wasserlösliche Rhodiumverbindung sowie Wasser als Lösungsmittel. Als Rhodiumverbindung eignet sich besonders Ammonium-di(Pyridin-2,6-dicarboxylat)-Rhodium(III), RhClx(NH3)6-x,ein Rhodiumacetat, ein Triethylentetaminkomplexes von Rhodiumchlorid oder ein Diethylentriaminkomplexe von Rhodiumchlorid. Die Abscheidung erfolgt bevorzugt bei 80°C bis 90°C bei einem pH-Wert von 8 bis 9. In dem Rhodiumbad ist bevorzugt eine Menge von 1 bis 50 g/l der Rhodiumverbindung lösbar.

IPC 1-7 (main, further and additional classification)

C23C 18/44

IPC 8 full level (invention and additional information)

C07F 15/00 (2006.01); C23C 18/42 (2006.01); C23C 18/44 (2006.01)

CPC (invention and additional information)

C23C 18/44 (2013.01)

Citation (search report)

Designated contracting state (EPC)

CH DE FR GB IT LI

EPO simple patent family

DE 19909678 C1 20000727; DE 50013442 D1 20061026; EP 1035229 A1 20000913; EP 1035229 B1 20060913; JP 2000282248 A 20001010

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