Global Patent Index - EP 1035434 A2

EP 1035434 A2 2000-09-13 - Photomask with unresolved auxiliary patterns

Title (en)

Photomask with unresolved auxiliary patterns

Title (de)

Photomaske mit nicht aufgelösten Hilfsmustern

Title (fr)

Masque pour photolithographie avec motifs auxiliaires à dimensions en-dessous de la limite de résolution

Publication

EP 1035434 A2 (EN)

Application

EP 00103583 A

Priority

US 26647399 A

Abstract (en)

A pattern for a mask used in lithographic processing, in accordance with the invention, includes a plurality of elongated structures disposed substantially parallel to each other on a substrate and a plurality of sub-resolution extrusions extending transversely from the elongated structures into spaces between the elongated structures, the plurality of extrusions having a substantially same size in a direction parallel to the elongated structures, the plurality of extrusions being spaced apart periodically in the direction parallel to the elongated structures, the elongated structures and extrusions being formed from an energy absorbent material. <IMAGE>

IPC 1-7 (main, further and additional classification)

G03F 1/14; G03F 7/20

IPC 8 full level (invention and additional information)

G03F 1/00 (2012.01); H01L 21/027 (2006.01)

CPC (invention and additional information)

G03F 1/36 (2013.01)

Designated contracting state (EPC)

DE FR GB IE IT NL

DOCDB simple family

EP 1035434 A2 20000913; EP 1035434 A3 20010418; CN 1267083 A 20000920; JP 2000284466 A 20001013; KR 20000062836 A 20001025; TW 440906 B 20010616; US 6114074 A 20000905