Global Patent Index - EP 1035434 A2

EP 1035434 A2 20000913 - Photomask with unresolved auxiliary patterns

Title (en)

Photomask with unresolved auxiliary patterns

Title (de)

Photomaske mit nicht aufgelösten Hilfsmustern

Title (fr)

Masque pour photolithographie avec motifs auxiliaires à dimensions en-dessous de la limite de résolution

Publication

EP 1035434 A2 20000913 (EN)

Application

EP 00103583 A 20000219

Priority

US 26647399 A 19990311

Abstract (en)

A pattern for a mask used in lithographic processing, in accordance with the invention, includes a plurality of elongated structures disposed substantially parallel to each other on a substrate and a plurality of sub-resolution extrusions extending transversely from the elongated structures into spaces between the elongated structures, the plurality of extrusions having a substantially same size in a direction parallel to the elongated structures, the plurality of extrusions being spaced apart periodically in the direction parallel to the elongated structures, the elongated structures and extrusions being formed from an energy absorbent material. <IMAGE>

IPC 1-7

G03F 1/14; G03F 7/20

IPC 8 full level

G03F 1/00 (2012.01); H01L 21/027 (2006.01)

CPC (source: EP KR US)

G03F 1/36 (2013.01 - EP KR US)

Designated contracting state (EPC)

DE FR GB IE IT NL

DOCDB simple family (publication)

EP 1035434 A2 20000913; EP 1035434 A3 20010418; CN 1267083 A 20000920; JP 2000284466 A 20001013; KR 20000062836 A 20001025; TW 440906 B 20010616; US 6114074 A 20000905

DOCDB simple family (application)

EP 00103583 A 20000219; CN 00103800 A 20000310; JP 2000069197 A 20000313; KR 20000012237 A 20000311; TW 89103597 A 20000301; US 26647399 A 19990311