EP 1035582 A2 20000913 - Semiconductor device and method of manufacturing the same
Title (en)
Semiconductor device and method of manufacturing the same
Title (de)
Halbleiterbauelement und zugehöriges Herstellungsverfahren
Title (fr)
Dispositif semi-conducteur et sa méthode de fabrication
Publication
Application
Priority
JP 6071799 A 19990308
Abstract (en)
A semiconductor device comprises at least element isolation regions 102 arranged on a main surface of a semiconductor substrate 100, one element region arranged on the main surface of the semiconductor substrate 100 to be surrounded by the element isolation insulating film 102, a gate electrode wiring 108b formed on the element isolation insulating film 102, and a gate electrode wiring108a formed over the element region via a gate insulating film 106. The coupling capacitance can be reduced by setting heights of the gate electrode wirings 108a and 108b substantially equally to thus reduce their opposing area. Also, the leakage current flowing between the gate electrode 108b and the semiconductor substrate 100 can be suppressed by forming the element isolation insulating film 102 to have a convex shape from the main surface of the semiconductor substrate 100. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/3205 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8242 (2006.01); H01L 23/52 (2006.01); H01L 27/088 (2006.01); H01L 27/108 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP)
H01L 21/76224 (2013.01)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 1035582 A2 20000913; CN 1266276 A 20000913; JP 2000260882 A 20000922; TW 441044 B 20010616
DOCDB simple family (application)
EP 00104468 A 20000308; CN 00104107 A 20000308; JP 6071799 A 19990308; TW 89104018 A 20000307