EP 1035583 B1 20071114 - Semiconductor element and fabricating method thereof
Title (en)
Semiconductor element and fabricating method thereof
Title (de)
Halbleiterelement und Herstellungsverfahren dafür
Title (fr)
Elément semiconducteur et son procédé de fabrication
Publication
Application
Priority
JP 6541999 A 19990311
Abstract (en)
[origin: EP1035583A2] The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained. <IMAGE>
IPC 8 full level
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/3205 (2006.01); H01L 21/60 (2006.01); H01L 23/485 (2006.01)
CPC (source: EP KR US)
H01L 24/03 (2013.01 - EP KR US); H01L 24/05 (2013.01 - EP KR US); H01L 24/11 (2013.01 - EP KR US); H01L 24/13 (2013.01 - EP KR US); H01L 24/16 (2013.01 - EP US); H01L 2224/02126 (2013.01 - EP US); H01L 2224/0347 (2013.01 - EP US); H01L 2224/03912 (2013.01 - EP US); H01L 2224/03914 (2013.01 - EP KR US); H01L 2224/0401 (2013.01 - EP KR US); H01L 2224/05027 (2013.01 - EP US); H01L 2224/05155 (2013.01 - EP US); H01L 2224/05164 (2013.01 - EP KR US); H01L 2224/05166 (2013.01 - EP KR US); H01L 2224/05541 (2013.01 - EP US); H01L 2224/05558 (2013.01 - EP US); H01L 2224/05572 (2013.01 - EP US); H01L 2224/0558 (2013.01 - EP US); H01L 2224/05639 (2013.01 - EP US); H01L 2224/1132 (2013.01 - EP KR US); H01L 2224/1147 (2013.01 - EP US); H01L 2224/11901 (2013.01 - EP US); H01L 2224/11902 (2013.01 - EP US); H01L 2224/13006 (2013.01 - EP KR US); H01L 2224/13023 (2013.01 - EP US); H01L 2224/13111 (2013.01 - EP KR US); H01L 2224/16238 (2013.01 - EP US); H01L 2224/16507 (2013.01 - EP US); H01L 2924/00013 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/01004 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01007 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01014 (2013.01 - EP US); H01L 2924/0102 (2013.01 - EP US); H01L 2924/01022 (2013.01 - EP US); H01L 2924/01024 (2013.01 - EP US); H01L 2924/01028 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/0103 (2013.01 - EP US); H01L 2924/01032 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01041 (2013.01 - EP US); H01L 2924/01046 (2013.01 - EP US); H01L 2924/01047 (2013.01 - EP US); H01L 2924/01049 (2013.01 - EP US); H01L 2924/0105 (2013.01 - EP US); H01L 2924/01051 (2013.01 - EP US); H01L 2924/01073 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/01092 (2013.01 - EP US); H01L 2924/01322 (2013.01 - EP US); H01L 2924/01327 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/04941 (2013.01 - EP US); H01L 2924/04953 (2013.01 - EP US); H01L 2924/10253 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1035583 A2 20000913; EP 1035583 A3 20010509; EP 1035583 B1 20071114; DE 60037057 D1 20071227; DE 60037057 T2 20080904; JP 2000260801 A 20000922; JP 4237325 B2 20090311; KR 100334593 B1 20020503; KR 20000076807 A 20001226; TW 452942 B 20010901; US 6569752 B1 20030527
DOCDB simple family (application)
EP 00104484 A 20000309; DE 60037057 T 20000309; JP 6541999 A 19990311; KR 20000011973 A 20000310; TW 89103282 A 20000224; US 52282000 A 20000310