EP 1035946 A1 20000920 - METHOD AND APPARATUS FOR CONDITIONING POLISHING PADS UTILIZING BRAZED DIAMOND TECHNOLOGY AND TITANIUM NITRIDE
Title (en)
METHOD AND APPARATUS FOR CONDITIONING POLISHING PADS UTILIZING BRAZED DIAMOND TECHNOLOGY AND TITANIUM NITRIDE
Title (de)
VERFAHREN UND VORRICHTUNG ZUM ABRICHTEN VON POLIERKISSEN MITTELS AUFGELÖTETEN DIAMANTEN TECHNOLOGIE UND TITANNITRID
Title (fr)
PROCEDE ET DISPOSITIF DE CONDITIONNEMENT DE TAMPONS A POLIR UTILISANT LA TECHNOLOGIE DU BRASAGE AU DIAMANT ASSOCIEE A DU NITRURE DE TITANE
Publication
Application
Priority
- US 9824960 W 19981120
- US 98424397 A 19971203
Abstract (en)
[origin: WO9928084A1] A method and apparatus for polishing and planarizing workpieces such as semiconductor wafers is presented. Conditioning rings, which are used to condition polishing pads used in the planarization or polishing of semiconductor wafers, are shown which utilize brazed diamond technology in association with a coating of a titanium nitride containing composition or a thin film diamond deposition in order to reduce the fracturing and loss of cutting elements bonded to the conditioning ring.
IPC 1-7
IPC 8 full level
B24B 53/12 (2006.01); B24B 53/007 (2006.01); B24B 53/017 (2012.01); B24D 18/00 (2006.01); H01L 21/304 (2006.01)
CPC (source: EP KR US)
B24B 53/017 (2013.01 - EP US); B24B 53/12 (2013.01 - EP US); B24D 18/00 (2013.01 - EP US); H01L 21/304 (2013.01 - KR); Y10S 228/903 (2013.01 - EP US); Y10T 29/4981 (2015.01 - EP US); Y10T 29/49888 (2015.01 - EP US); Y10T 29/49982 (2015.01 - EP US)
Citation (search report)
See references of WO 9928084A1
Designated contracting state (EPC)
DE GB
DOCDB simple family (publication)
WO 9928084 A1 19990610; EP 1035946 A1 20000920; JP 2001524396 A 20011204; JP 2004001212 A 20040108; JP 2009072908 A 20090409; KR 20010024685 A 20010326; TW 411293 B 20001111; US 6347981 B1 20020219; US 6347982 B1 20020219; US 6350184 B1 20020226; US 6371838 B1 20020416
DOCDB simple family (application)
US 9824960 W 19981120; EP 98958112 A 19981120; JP 2000523042 A 19981120; JP 2003128312 A 20030506; JP 2008301656 A 20081126; KR 20007006095 A 20000603; TW 87119693 A 19981127; US 30346399 A 19990430; US 30348399 A 19990430; US 64295400 A 20000821; US 98424397 A 19971203