EP 1036418 A2 20000920 - SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING ITS TERMINATION REGION
Title (en)
SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING ITS TERMINATION REGION
Title (de)
HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG DESSEN RANDABSCHLUSSES
Title (fr)
COMPOSANT SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE SA REGION DE TERMINAISON
Publication
Application
Priority
- DE 9803453 W 19981123
- DE 19752020 A 19971124
Abstract (en)
[origin: WO9927582A2] The invention relates to a semiconductor component which is capable of blocking such as an (IGBT), a thyristor, a GTO or diodes, especially schottky diodes. An insulator profile section (10a, 10b, 10c, 10d, 11) provided in the border area of an anode metallic coating (1, 31) is fixed (directly in the edge area) on the substrate (9) of the component. The insulator profile has a curved area (KB) and a base area (SB), said curved area having a surface (OF) which begins flat and curves outward and upward in a steadily increasing manner. A metallic coating (MET1; 30a, 30b, 30c, 30d, 31b) is deposited on the surface (OF). Said coating directly follows the surface curvature and laterally extends the inner anode metallic coating. The upper end of the curved metallic coating (MET1; 30a, 30b...) is distanced and insulated from one of these surrounding outer metallic coatings (MET2; 3) by the surrounding base area (SB) of the insulator profile (10a,...,11) such that an extensively constant course of the line of force which evades extreme values results between both metallic coatings (1, 31, MET1; 3, MET2) when reverse voltage or blocking voltage is applied between the interspaced metallic coatings.
IPC 1-7
IPC 8 full level
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/47 (2006.01); H01L 29/74 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01); H01L 29/744 (2006.01)
CPC (source: EP US)
H01L 29/402 (2013.01 - EP US); H01L 29/404 (2013.01 - EP US); H01L 29/7811 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP US); H01L 29/872 (2013.01 - EP US)
Citation (search report)
See references of WO 9927582A2
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 9927582 A2 19990603; WO 9927582 A3 19990715; DE 19881806 D2 20000824; EP 1036418 A2 20000920; JP 2001524756 A 20011204; US 2002140046 A1 20021003; US 2004129993 A1 20040708; US 6426540 B1 20020730; US 6956249 B2 20051018
DOCDB simple family (application)
DE 9803453 W 19981123; DE 19881806 D 19981123; EP 98963372 A 19981123; JP 2000522625 A 19981123; US 12763602 A 20020422; US 55504000 A 20000823; US 66902403 A 20030923