Global Patent Index - EP 1038320 A2

EP 1038320 A2 2000-09-27 - METHOD FOR PRODUCING A MATRIX FROM THIN-FILM TRANSISTORS WITH STORAGE CAPACITIES

Title (en)

METHOD FOR PRODUCING A MATRIX FROM THIN-FILM TRANSISTORS WITH STORAGE CAPACITIES

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER MATRIX AUS DÜNNSCHICHTTRANSISTOREN MIT SPEICHERKAPAZITÄTEN

Title (fr)

PROCEDE POUR LA PRODUCTION D'UNE MATRICE DE TRANSISTORS A COUCHE MINCE AVEC DES CAPACITES DE MEMOIRE

Publication

EP 1038320 A2 (DE)

Application

EP 98966240 A

Priority

  • DE 19754784 A
  • EP 9807361 W

Abstract (en)

[origin: DE19754784A1] The invention relates to a method for producing a matrix from thin-film transistors with storage capacities, especially for liquid crystal display screens. According to the invention, photo-structurable materials are used for passivating the matrix and for producing the pixel electrodes in order to reduce the number of process steps.

IPC 1-7 (main, further and additional classification)

H01L 29/00

IPC 8 full level (invention and additional information)

G02F 1/136 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1333 (2006.01)

CPC (invention and additional information)

H01L 27/12 (2013.01); G02F 1/13439 (2013.01); G02F 1/1368 (2013.01); G02F 1/133345 (2013.01); G02F 2001/133357 (2013.01)

Citation (search report)

See references of WO 9930352A3

Designated contracting state (EPC)

DE FR NL

EPO simple patent family

DE 19754784 A1 19990624; DE 19754784 B4 20040212; EP 1038320 A2 20000927; JP 2001526412 A 20011218; TW 432707 B 20010501; WO 9930352 A2 19990617; WO 9930352 A3 19991209

INPADOC legal status


2002-07-24 [18R] REFUSED

- Effective date: 20020308

2001-01-24 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20001207

2000-09-27 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000710

2000-09-27 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): DE FR NL