EP 1038342 A1 20000927 - METHOD FOR CONTROLLING A UNIPOLAR SEMICONDUCTOR LASER
Title (en)
METHOD FOR CONTROLLING A UNIPOLAR SEMICONDUCTOR LASER
Title (de)
KONTROLVERFAHREN EINER MONOPOLAREN HALBLEITERLASER
Title (fr)
PROCEDE DE CONTROLE D'UN LASER SEMICONDUCTEUR UNIPOLAIRE
Publication
Application
Priority
- FR 9902457 W 19991012
- FR 9812812 A 19981013
Abstract (en)
[origin: FR2784514A1] The unipolar semiconductor laser control method has a stack of semiconductor layers forming a quantum well. Photonic energy is created by the difference between two energy levels (E1,E2). An optical pump transmits a control beam of photonic energy at a wavelength at or above the forbidden band of the semiconductor layer, from an initial photonic level (E3).
IPC 1-7
IPC 8 full level
H01S 5/34 (2006.01); H01S 5/04 (2006.01); H01S 5/06 (2006.01); H01S 5/12 (2006.01)
CPC (source: EP US)
B82Y 20/00 (2013.01 - EP US); H01S 5/3402 (2013.01 - EP US); H01S 5/041 (2013.01 - EP US); H01S 5/0608 (2013.01 - EP US); H01S 5/1228 (2013.01 - EP US)
Citation (search report)
See references of WO 0022704A1
Designated contracting state (EPC)
CH DE GB IT LI
DOCDB simple family (publication)
FR 2784514 A1 20000414; FR 2784514 B1 20010427; EP 1038342 A1 20000927; US 6738404 B1 20040518; WO 0022704 A1 20000420
DOCDB simple family (application)
FR 9812812 A 19981013; EP 99947549 A 19991012; FR 9902457 W 19991012; US 58116900 A 20000613