EP 1040512 A1 20001004 - METHOD OF FORMING A LATERALLY-VARYING CHARGE PROFILE IN A SILICON CARBIDE SUBSTRATE

Title (en)

METHOD OF FORMING A LATERALLY-VARYING CHARGE PROFILE IN A SILICON CARBIDE SUBSTRATE

Title (de)

VERFAHREN ZUR BILDUNG EINES IN EINEN SILIZIUMKARBIDSUBSTRAT VERÄNDERTEN LADUNGSPROFIL

Title (fr)

PROCEDE DE FORMATION D'UN PROFIL DE CHARGE VARIANT LATERALEMENT DANS UN SUBSTRAT EN CARBURE DE SILICIUM

Publication

EP 1040512 A1 20001004 (EN)

Application

EP 99921044 A 19990531

Priority

IB 9900971 W 19990531
US 11928298 A 19980720

Abstract (en)

[origin: WO0005755A1] A method of forming a laterally-varying charge profile in a silicon carbide substrate includes the steps of forming a silicon nitride layer on a polysilicon layer formed on the silicon carbide substrate, and patterning the silicon nitride layer to provide a plurality of silicon nitride layer segments which are spaced apart in the lateral direction and which are provided with openings therebetween which are of varying widths. The polysilicon layer is oxidized using the layer segments as an oxidation mask to form a silicon dioxide layer of varying thickness from the polysilicon layer and to form a polysilicon layer portion therebeneath of varying thickness. The silicon dioxide layer and silicon nitride layer segments are removed, and a dopant is ion implanted into the silicon carbide substrate using the polysilicon layer portion of varying thickness as an implantation mask to form a laterally-varying charge profile in the silicon carbide substrate. This method provides an effective and commercially-feasible technique for forming various high-power lateral semiconductor devices, including MOSFET, JFET, diode and IGBT structures, with excellent high-temperature and high-power operating characteristics.

IPC 1-7

H01L 21/265; H01L 21/31

IPC 8 full level

H01L 21/266 (2006.01); C04B 28/02 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/316 (2006.01)

CPC (source: EP US)

C04B 35/565 (2013.01 - EP US); H01L 21/0465 (2013.01 - EP US); H01L 29/1608 (2013.01 - EP)

Citation (search report)

See references of WO 0005755A1

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

WO 0005755 A1 20000203; EP 1040512 A1 20001004; JP 2002521818 A 20020716; US 6096663 A 20000801

DOCDB simple family (application)

IB 9900971 W 19990531; EP 99921044 A 19990531; JP 2000561651 A 19990531; US 11928298 A 19980720