Global patent index - EP 1040512 A1

EP 1040512 A1 2000-10-04 - METHOD OF FORMING A LATERALLY-VARYING CHARGE PROFILE IN A SILICON CARBIDE SUBSTRATE

Title (en)

METHOD OF FORMING A LATERALLY-VARYING CHARGE PROFILE IN A SILICON CARBIDE SUBSTRATE

Title (de)

VERFAHREN ZUR BILDUNG EINES IN EINEN SILIZIUMKARBIDSUBSTRAT VERÄNDERTEN LADUNGSPROFIL

Title (fr)

PROCEDE DE FORMATION D'UN PROFIL DE CHARGE VARIANT LATERALEMENT DANS UN SUBSTRAT EN CARBURE DE SILICIUM

Publication

EP 1040512 A1 (EN)

Application

EP 99921044 A

Priority

  • IB 9900971 W
  • US 11928298 A

Abstract (en)

[origin: WO0005755A1] A method of forming a laterally-varying charge profile in a silicon carbide substrate includes the steps of forming a silicon nitride layer on a polysilicon layer formed on the silicon carbide substrate, and patterning the silicon nitride layer to provide a plurality of silicon nitride layer segments which are spaced apart in the lateral direction and which are provided with openings therebetween which are of varying widths. The polysilicon layer is oxidized using the layer segments as an oxidation mask to form a silicon dioxide layer of varying thickness from the polysilicon layer and to form a polysilicon layer portion therebeneath of varying thickness. The silicon dioxide layer and silicon nitride layer segments are removed, and a dopant is ion implanted into the silicon carbide substrate using the polysilicon layer portion of varying thickness as an implantation mask to form a laterally-varying charge profile in the silicon carbide substrate. This method provides an effective and commercially-feasible technique for forming various high-power lateral semiconductor devices, including MOSFET, JFET, diode and IGBT structures, with excellent high-temperature and high-power operating characteristics.

IPC 1-7 (main, further and additional classification)

H01L 21/265; H01L 21/31

IPC 8 full level (invention and additional information)

H01L 21/266 (2006.01); C04B 28/02 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/316 (2006.01)

CPC (invention and additional information)

H01L 21/0465 (2013.01); C04B 35/565 (2013.01)

Citation (search report)

See references of WO 0005755A1

Designated contracting state (EPC)

DE FR GB IT NL

EPO simple patent family

WO 0005755 A1 20000203; EP 1040512 A1 20001004; JP 2002521818 A 20020716; US 6096663 A 20000801

INPADOC legal status

2004-03-24 [18W] WITHDRAWN

- Ref Legal Event Code: 18W

- Effective date: 20040202

2000-10-04 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 20000803

2000-10-04 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE FR GB IT NL