EP 1040527 A2 20001004 - OPTO-ELECTRONICAL COMPONENT FOR THE INFRARED WAVELENGTH RANGE
Title (en)
OPTO-ELECTRONICAL COMPONENT FOR THE INFRARED WAVELENGTH RANGE
Title (de)
OPTOELEKTRONISCHES BAUELEMENT FÜR DEN INFRAROTEN WELLENLÄNGENBEREICH
Title (fr)
COMPOSANT OPTOELECTRONIQUE POUR LE DOMAINE DE LONGUEUR D'ONDE INFRAROUGE
Publication
Application
Priority
- DE 9803641 W 19981211
- DE 19754945 A 19971211
Abstract (en)
[origin: DE19754945A1] A silicon-based, IC-compatible luminescent diode (LED) or laser diode (LD) has a light-emitting layer based on semiconductor ruthenium silicide (Ru2Si3) on silicon for the near infrared wavelength range around 1.5 mu m. This component has an epitaxial Si/Ru2Si3Si or Si/Ru2Si3 heterostructure with band discontinuities of more than 0.05 eV for electrons or holes in order to achieve charge carrier confinement and thus an efficient light yield at room temperature.
IPC 1-7
IPC 8 full level
H01L 31/032 (2006.01); H01L 31/103 (2006.01); H01L 31/105 (2006.01); H01L 33/00 (2006.01); H01L 33/26 (2010.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01)
CPC (source: EP)
B82Y 20/00 (2013.01); H01L 31/032 (2013.01); H01L 31/103 (2013.01); H01L 31/105 (2013.01); H01L 33/26 (2013.01); H01S 5/32 (2013.01); H01S 5/3223 (2013.01); H01S 5/3224 (2013.01); H01S 5/3427 (2013.01); H01S 2304/00 (2013.01)
Citation (search report)
See references of WO 9930372A2
Designated contracting state (EPC)
BE DE FR GB NL
DOCDB simple family (publication)
DE 19754945 A1 19990624; DE 19754945 B4 20060427; EP 1040527 A2 20001004; WO 9930372 A2 19990617; WO 9930372 A3 19990729
DOCDB simple family (application)
DE 19754945 A 19971211; DE 9803641 W 19981211; EP 98966531 A 19981211