EP 1040556 A1 20001004 - ELECTRICAL CIRCUIT ARRANGEMENT FOR TRANSFORMING MAGNETIC FIELD ENERGY INTO ELECTRIC FIELD ENERGY
Title (en)
ELECTRICAL CIRCUIT ARRANGEMENT FOR TRANSFORMING MAGNETIC FIELD ENERGY INTO ELECTRIC FIELD ENERGY
Title (de)
ELEKTRISCHE SCHALTUNGSANORDNUNG ZUR TRANSFORMATION VON MAGNETISCHER FELDENERGIE IN ELEKTRISCHE FELDENERGIE
Title (fr)
CONFIGURATION DE CIRCUIT ELECTRIQUE DESTINEE A LA TRANSFORMATION D'ENERGIE DE CHAMP MAGNETIQUE EN ENERGIE DE CHAMP ELECTRIQUE
Publication
Application
Priority
- DE 9803603 W 19981208
- DE 19756873 A 19971219
Abstract (en)
[origin: DE19756873A1] An electrical circuit arrangement (G) for transforming (W) magnetic field energy (M) into electric field energy (E) has at least one first accumulator element (L) for magnetic field energy (M), a second accumulator element (C) for electric field energy (E), a semiconductor valve element (D) and an electrical switching element (S). According to the invention, the semiconductor material of which the semiconductor valve element (D) is made has a band gap (VB) of at least 2 eV and a breakdown field strength (EK) of at least 5*10 &cir& 5 V/cm. The semiconductor material of which the semiconductor valve element (D) is made contains, in particular, silicon carbide (SiC), gallium nitride (GaN) or diamond (Cdia). The semiconductor valve element (D) is, in particular, a semiconductor diode, preferably a Schottky diode. Owing to the low dynamic switching losses of the semiconductor valve element (D) according to the invention, the electrical circuit arrangement (G) can be used with the smallest components even at high operating voltages and high switching frequencies.
IPC 1-7
IPC 8 full level
H01L 29/47 (2006.01); H01L 29/872 (2006.01); H02M 3/155 (2006.01)
CPC (source: EP KR)
H02M 3/10 (2013.01 - KR); H02M 3/155 (2013.01 - EP); Y02B 70/10 (2013.01 - EP)
Citation (search report)
See references of WO 9933160A1
Designated contracting state (EPC)
AT CH DE FR GB IE IT LI SE
DOCDB simple family (publication)
DE 19756873 A1 19990701; CA 2315020 A1 19990701; CN 1290422 A 20010404; EP 1040556 A1 20001004; JP 2001527377 A 20011225; KR 20010033341 A 20010425; TW 416181 B 20001221; WO 9933160 A1 19990701
DOCDB simple family (application)
DE 19756873 A 19971219; CA 2315020 A 19981208; CN 98813317 A 19981208; DE 9803603 W 19981208; EP 98963391 A 19981208; JP 2000525963 A 19981208; KR 20007006803 A 20000619; TW 87119826 A 19981130