Global Patent Index - EP 1040556 A1

EP 1040556 A1 20001004 - ELECTRICAL CIRCUIT ARRANGEMENT FOR TRANSFORMING MAGNETIC FIELD ENERGY INTO ELECTRIC FIELD ENERGY

Title (en)

ELECTRICAL CIRCUIT ARRANGEMENT FOR TRANSFORMING MAGNETIC FIELD ENERGY INTO ELECTRIC FIELD ENERGY

Title (de)

ELEKTRISCHE SCHALTUNGSANORDNUNG ZUR TRANSFORMATION VON MAGNETISCHER FELDENERGIE IN ELEKTRISCHE FELDENERGIE

Title (fr)

CONFIGURATION DE CIRCUIT ELECTRIQUE DESTINEE A LA TRANSFORMATION D'ENERGIE DE CHAMP MAGNETIQUE EN ENERGIE DE CHAMP ELECTRIQUE

Publication

EP 1040556 A1 20001004 (DE)

Application

EP 98963391 A 19981208

Priority

  • DE 9803603 W 19981208
  • DE 19756873 A 19971219

Abstract (en)

[origin: DE19756873A1] An electrical circuit arrangement (G) for transforming (W) magnetic field energy (M) into electric field energy (E) has at least one first accumulator element (L) for magnetic field energy (M), a second accumulator element (C) for electric field energy (E), a semiconductor valve element (D) and an electrical switching element (S). According to the invention, the semiconductor material of which the semiconductor valve element (D) is made has a band gap (VB) of at least 2 eV and a breakdown field strength (EK) of at least 5*10 &cir& 5 V/cm. The semiconductor material of which the semiconductor valve element (D) is made contains, in particular, silicon carbide (SiC), gallium nitride (GaN) or diamond (Cdia). The semiconductor valve element (D) is, in particular, a semiconductor diode, preferably a Schottky diode. Owing to the low dynamic switching losses of the semiconductor valve element (D) according to the invention, the electrical circuit arrangement (G) can be used with the smallest components even at high operating voltages and high switching frequencies.

IPC 1-7

H02M 3/10; H01L 29/12; G05F 1/46

IPC 8 full level

H01L 29/47 (2006.01); H01L 29/872 (2006.01); H02M 3/155 (2006.01)

CPC (source: EP KR)

H02M 3/10 (2013.01 - KR); H02M 3/155 (2013.01 - EP); Y02B 70/10 (2013.01 - EP)

Citation (search report)

See references of WO 9933160A1

Designated contracting state (EPC)

AT CH DE FR GB IE IT LI SE

DOCDB simple family (publication)

DE 19756873 A1 19990701; CA 2315020 A1 19990701; CN 1290422 A 20010404; EP 1040556 A1 20001004; JP 2001527377 A 20011225; KR 20010033341 A 20010425; TW 416181 B 20001221; WO 9933160 A1 19990701

DOCDB simple family (application)

DE 19756873 A 19971219; CA 2315020 A 19981208; CN 98813317 A 19981208; DE 9803603 W 19981208; EP 98963391 A 19981208; JP 2000525963 A 19981208; KR 20007006803 A 20000619; TW 87119826 A 19981130