Global patent index - EP 1041442 A1

EP 1041442 A1 2000-10-04 - Chemical amplification type positive resist

Title (en)

Chemical amplification type positive resist

Title (de)

Positiv arbeitender Resist vom chemischen Verstärkertyp

Title (fr)

Résist positif de type à amplification chimique

Publication

EP 1041442 A1 (EN)

Application

EP 00105938 A

Priority

  • JP 9299099 A
  • JP 31526499 A

Abstract (en)

A chemical amplification type positive resist composition which is good in resolution, provide a good pattern profile under exposure using light of wavelength of 220 nm or shorter even when applied on a basic substrate or a low reflectance substrate and which comprises an acid generator comprising an aliphatic sulfonium salt represented by the following formula (I): <CHEM> wherein Q<1> represents an alkyl group, Q<2> represents an alkyl group or a residue of an alicyclic hydrocarbon and m represents an integer of 1 to 8; and at least one onium salt selected from triphenylsulfonium salts represented by the following formula (IIa) and diphenyiodonium salts represented by the following formula (IIb): <CHEM> wherein Q<3>, Q<4>, Q<5>, Q<6> and Q<7> each independently represent a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, and q and p represent a integer of 4 to 8; and (2) a resin which has a polymerization unit with a group unstable to an acid, and is insoluble or barely soluble in alkali by itself but changes to become soluble in alkali by the action of the acid, is provided.

IPC 1-7 (main, further and additional classification)

G03F 7/004; C07C 381/12; G03F 7/039

IPC 8 full level (invention and additional information)

C07C 381/12 (2006.01); G03F 7/004 (2006.01); G03F 7/039 (2006.01)

CPC (invention and additional information)

C07C 381/12 (2013.01); G03F 7/0045 (2013.01); G03F 7/039 (2013.01); Y10S 430/115 (2013.01); Y10S 430/122 (2013.01)

Citation (search report)

  • [AD] US 5585507 A 19961217 - NAKANO KAICHIRO [JP], et al
  • [AD] US 5691111 A 19971125 - IWASA SHIGEYUKI [JP], et al
  • [A] Y. UETANI ET AL.: "Positive ArF resist with 2EAdMA/GBLMA resin system", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 3678, no. 1, 15 March 1999 (1999-03-15), USA, pages 510 - 517, XP002143018

Designated contracting state (EPC)

BE DE FR GB IT NL

EPO simple patent family

EP 1041442 A1 20001004; EP 1041442 B1 20041027; CN 1207632 C 20050622; CN 1268680 A 20001004; DE 60015220 D1 20041202; DE 60015220 T2 20060202; SG 76651 A1 20001121; TW I225966 B 20050101; US 6348297 B1 20020219

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