EP 1041668 A3 20010816 - Cavity resonator for reducing phase noise of voltage controlled oscillator
Title (en)
Cavity resonator for reducing phase noise of voltage controlled oscillator
Title (de)
Hohlraumresonator zur Verminderung des Phasenrauschen eines spannungsgesteuerten Oszillators
Title (fr)
Cavité résonante pour réduire le bruit de phase d'un oscillateur commandé en tension
Publication
Application
Priority
KR 19990011267 A 19990331
Abstract (en)
[origin: EP1041668A2] There is provided a cavity resonator for reducing the phase noise of electromagnetic waves output from a monolithic microwave integrated circuit (MMIC) voltage controlled oscillator (VCO) by utilizing a semiconductor (e.g., silicon, GaAs or InP) micro machining technique. In the cavity (500), instead of an existing metal cavity, a cavity, which is obtained by micro machining silicon or a compound semiconductor, is coupled to a microstrip line (400) to allow the cavity resonator to be adopted in a reflection type voltage controlled oscillator. A coupling slot (210) is formed by removing a predetermined size of the part of an upper ground plane film (200) of a cavity facing to the microstrip line (400). Consequently, the cavity resonator reduces the phase noise of microwaves or millimetre waves which are output from a voltage controlled oscillator. <IMAGE>
IPC 1-7
IPC 8 full level
H01P 5/107 (2006.01); H01P 7/06 (2006.01); H01P 11/00 (2006.01)
CPC (source: EP KR US)
H01P 5/107 (2013.01 - EP US); H01P 7/06 (2013.01 - KR); H01P 7/065 (2013.01 - EP US); H01P 11/00 (2013.01 - KR)
Citation (search report)
- [XY] US 5821836 A 19981013 - KATEHI LINDA P B [US], et al
- [Y] WO 9853518 A1 19981126 - THOMSON CSF [FR], et al
- [A] US 4211987 A 19800708 - PAN JING-JONG [US]
- [DXY] PAPAPOLYMEROU J ET AL: "A MICROMACHINED HIGH-Q X-BAND RESONATOR", IEEE MICROWAVE AND GUIDED WAVE LETTERS,US,IEEE INC, NEW YORK, vol. 7, no. 6, 1 June 1997 (1997-06-01), pages 168 - 170, XP000690394, ISSN: 1051-8207
- [Y] PATENT ABSTRACTS OF JAPAN vol. 012, no. 217 (E - 624) 21 June 1988 (1988-06-21)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 1041668 A2 20001004; EP 1041668 A3 20010816; KR 100552658 B1 20060217; KR 20000061886 A 20001025; US 6362706 B1 20020326
DOCDB simple family (application)
EP 00302698 A 20000330; KR 19990011267 A 19990331; US 54205600 A 20000331