Global Patent Index - EP 1042655 A1

EP 1042655 A1 2000-10-11 - SENSOR WITH A TEMPERATURE DEPENDENT MULTIPLIER RESISTOR AND THE UTILIZATION THEREOF FOR MEASURING TEMPERATURES

Title (en)

SENSOR WITH A TEMPERATURE DEPENDENT MULTIPLIER RESISTOR AND THE UTILIZATION THEREOF FOR MEASURING TEMPERATURES

Title (de)

SENSOR MIT TEMPERATURABHÄNGIGEM MESSWIDERSTAND UND DESSEN VERWENDUNG ZUR TEMPERATURMESSUNG

Title (fr)

DETECTEUR COMPORTANT UNE RESISTANCE DE MESURE VARIABLE AVEC LA TEMPERATURE ET SON UTILISATION POUR MESURER LA TEMPERATURE

Publication

EP 1042655 A1 (DE)

Application

EP 98965277 A

Priority

  • DE 19757258 A
  • EP 9808278 W

Abstract (en)

[origin: DE19757258A1] The invention relates to a temperature dependent multiplier resistor of a temperature sensor which is connected in series to a reference resistor, whereby a constant applied current passes through said series connection. A connection endpoint located between both resistors is connected to the N-input of a first countercoupled operational amplifier whose P-input is supplied with a direct voltage tapped by a voltage divider. When the temperature increases in the area of the multiplier resistor, the potential increases on the output of the first operational amplifier which is connected to the multiplier resistor. The operational amplifier supplies the applied constant current while the potential on the output of the operational amplifier decreases as the temperature falls. The temperature dependent voltage signal released on the operational amplifier is delivered to the P-input of a series connected second operational amplifier in a subtractor connection. The output of the second operational amplifier is connected to a measuring device for measuring the voltage which is characteristic of the temperature. In a preferred design, the multiplier resistor made of platinum or a platinum based alloy is directly deposited on a substrate made of ceramic (Al2O3) thus forming a thin-layer element. The reference resistor and the micromodule are additionally placed on the surface of the thin-layer element. The temperature sensor has a compact structure due to an evaluation circuit which is configured as a micromodule, and can be used up to temperatures of approximately 300 DEG C.

IPC 1-7 (main, further and additional classification)

G01K 7/18

IPC 8 full level (invention and additional information)

G01K 7/18 (2006.01)

CPC (invention and additional information)

G01K 7/183 (2013.01)

Citation (search report)

See references of WO 9934178A1

Designated contracting state (EPC)

DE FR

EPO simple patent family

DE 19757258 A1 19990715; DE 19757258 C2 20010208; EP 1042655 A1 20001011; JP 2002500348 A 20020108; US 6232618 B1 20010515; WO 9934178 A1 19990708

INPADOC legal status


2004-01-07 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20030701

2000-11-02 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000523

2000-10-11 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): DE FR