EP 1048067 A1 20001102 - THIN FILM TRANSISTORS AND THEIR MANUFACTURE
Title (en)
THIN FILM TRANSISTORS AND THEIR MANUFACTURE
Title (de)
DÜNNFILMTRANSISTOREN UND IHRE HERSTELLUNG
Title (fr)
TRANSISTORS FILM MINCE ET LEUR FABRICATION
Publication
Application
Priority
- EP 9905777 W 19990806
- GB 9818310 A 19980822
Abstract (en)
[origin: WO0011709A1] In an insulated-gate top-gate thin film transistor, the insulated gate structure comprises a first gate insulator layer over the semiconductor body of the transistor, an intermediate conductive layer over the first gate insulator layer, a second gate insulator layer over the intermediate conductive layer and a gate conductor over the second gate insulating layer. The intermediate conductive layer enables the two insulator layers to be etched under separate conditions, and also acts as a field plate to reduce the effect of negative undercut in the top insulator layer.
IPC 1-7
IPC 8 full level
G02F 1/1368 (2006.01); H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01)
CPC (source: EP)
H01L 27/12 (2013.01); H01L 29/0607 (2013.01); H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/66757 (2013.01); H01L 29/788 (2013.01)
Citation (search report)
See references of WO 0011709A1
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
WO 0011709 A1 20000302; EP 1048067 A1 20001102; GB 9818310 D0 19981014; JP 2002523898 A 20020730
DOCDB simple family (application)
EP 9905777 W 19990806; EP 99941553 A 19990806; GB 9818310 A 19980822; JP 2000566881 A 19990806