Global Patent Index - EP 1048067 A1

EP 1048067 A1 2000-11-02 - THIN FILM TRANSISTORS AND THEIR MANUFACTURE

Title (en)

THIN FILM TRANSISTORS AND THEIR MANUFACTURE

Title (de)

DÜNNFILMTRANSISTOREN UND IHRE HERSTELLUNG

Title (fr)

TRANSISTORS FILM MINCE ET LEUR FABRICATION

Publication

EP 1048067 A1 (EN)

Application

EP 99941553 A

Priority

  • EP 9905777 W
  • GB 9818310 A

Abstract (en)

[origin: WO0011709A1] In an insulated-gate top-gate thin film transistor, the insulated gate structure comprises a first gate insulator layer over the semiconductor body of the transistor, an intermediate conductive layer over the first gate insulator layer, a second gate insulator layer over the intermediate conductive layer and a gate conductor over the second gate insulating layer. The intermediate conductive layer enables the two insulator layers to be etched under separate conditions, and also acts as a field plate to reduce the effect of negative undercut in the top insulator layer.

IPC 1-7 (main, further and additional classification)

H01L 21/336; H01L 29/49; H01L 29/786

IPC 8 full level (invention and additional information)

G02F 1/1368 (2006.01); H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01)

CPC (invention and additional information)

H01L 29/4908 (2013.01); H01L 27/12 (2013.01); H01L 29/0607 (2013.01); H01L 29/42384 (2013.01); H01L 29/66757 (2013.01); H01L 29/788 (2013.01)

Citation (search report)

See references of WO 0011709A1

Designated contracting state (EPC)

DE FR GB NL

EPO simple patent family

WO 0011709 A1 20000302; EP 1048067 A1 20001102; GB 9818310 D0 19981014; JP 2002523898 A 20020730

INPADOC legal status


2001-05-23 [18D] DEEMED TO BE WITHDRAWN

- Ref Legal Event Code: 18D

- Effective date: 20000523

2000-11-02 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE FR GB NL