EP 1048074 A1 20001102 - POWER MOSFET
Title (en)
POWER MOSFET
Title (de)
LEISTUNGS-MOSFET
Title (fr)
TRANSISTOR MOS DE PUISSANCE
Publication
Application
Priority
- DE 9803589 W 19981207
- DE 19801095 A 19980114
Abstract (en)
[origin: DE19801095A1] A power MOSFET has a highly conductive connection (9) between its source zone (4) and its semiconductor substrate (1). Preferred Features: The conductive connection may be: (a) a first conductivity type heavily doped semiconductor zone; (b) a trench from which the first conductivity type dopant diffuses outwardly and which is filled with single crystal silicon or polysilicon; or (c) a trench which is filled with a metal, especially tungsten, or a highly conductive layer, especially titanium nitride.
IPC 1-7
IPC 8 full level
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/41 (2006.01); H01L 29/423 (2006.01)
CPC (source: EP US)
H01L 29/4175 (2013.01 - EP US); H01L 29/7816 (2013.01 - EP US); H01L 29/7834 (2013.01 - EP US); H01L 29/7835 (2013.01 - EP US); H01L 29/0696 (2013.01 - EP US); H01L 29/41 (2013.01 - EP US); H01L 29/41766 (2013.01 - EP US); H01L 29/4236 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Citation (search report)
See references of WO 9936961A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19801095 A1 19990715; DE 19801095 B4 20071213; EP 1048074 A1 20001102; JP 2002510147 A 20020402; US 6459142 B1 20021001; WO 9936961 A1 19990722
DOCDB simple family (application)
DE 19801095 A 19980114; DE 9803589 W 19981207; EP 98966510 A 19981207; JP 2000540579 A 19981207; US 61662000 A 20000714