EP 1048075 A1 20001102 - SEMICONDUCTOR COMPONENT WITH SEVERAL SUBSTRATE LAYERS AND AT LEAST ONE SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
Title (en)
SEMICONDUCTOR COMPONENT WITH SEVERAL SUBSTRATE LAYERS AND AT LEAST ONE SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
Title (de)
HALBLEITERBAUELEMENT MIT MEHREREN SUBSTRATLAGEN UND ZUMINDEST EINEM HALBLEITERCHIP UND EINEM VERFAHREN ZUM HERSTELLEN EINES SOLCHEN HALBLEITERBAUELEMENTES
Title (fr)
COMPOSANT A SEMI-CONDUCTEUR COMPORTANT PLUSIEURS COUCHES DE SUBSTRATS ET AU MOINS UNE PUCE DE SEMI-CONDUCTEUR, ET PROCEDE DE PRODUCTION D'UN TEL COMPOSANT A SEMI-CONDUCTEUR
Publication
Application
Priority
- DE 9900069 W 19990114
- DE 19801312 A 19980115
Abstract (en)
[origin: DE19801312A1] The semiconductor element has several stacked substrate layers (2,3,2a,3a,2c) and several semiconductor chips (1) with flip-chip contacts (12) and contact pads (7) connected to the element contacts (17) via conductor paths (4). The substrate layers are selectively provided with openings (14) for locating the semiconductor chips and the conductor paths for connecting the chips to the element contacts, each extending from the chip to the edge of the substrate layer.
IPC 1-7
IPC 8 full level
H01L 25/065 (2006.01); H01L 25/10 (2006.01); H01L 25/11 (2006.01); H01L 25/18 (2006.01); H01R 12/16 (2006.01); H05K 1/14 (2006.01); H05K 3/34 (2006.01); H05K 3/36 (2006.01)
CPC (source: EP KR US)
H01L 25/065 (2013.01 - KR); H01L 25/0652 (2013.01 - EP US); H01L 25/0657 (2013.01 - EP US); H01L 2224/16225 (2013.01 - EP US); H01L 2224/32225 (2013.01 - EP US); H01L 2224/48091 (2013.01 - EP US); H01L 2224/48225 (2013.01 - EP US); H01L 2224/48227 (2013.01 - EP US); H01L 2224/73204 (2013.01 - EP US); H01L 2224/73265 (2013.01 - EP US); H01L 2225/0651 (2013.01 - EP US); H01L 2225/06517 (2013.01 - EP US); H01L 2225/0652 (2013.01 - EP US); H01L 2225/06551 (2013.01 - EP US); H01L 2225/06555 (2013.01 - EP US); H01L 2225/06572 (2013.01 - EP US); H01L 2225/06575 (2013.01 - EP US); H01L 2924/01004 (2013.01 - EP US); H01L 2924/01067 (2013.01 - EP US); H01L 2924/01068 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/07811 (2013.01 - EP US); H01L 2924/15311 (2013.01 - EP US); H01L 2924/16195 (2013.01 - EP US); H01L 2924/1627 (2013.01 - EP US); H01L 2924/181 (2013.01 - EP US); H01L 2924/3025 (2013.01 - EP US); H05K 1/144 (2013.01 - EP US); H05K 3/3431 (2013.01 - EP US); H05K 3/366 (2013.01 - EP US)
Citation (search report)
See references of WO 9936962A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19801312 A1 19990722; EP 1048075 A1 20001102; JP 2002510148 A 20020402; KR 20010034154 A 20010425; US 6380616 B1 20020430; WO 9936962 A1 19990722
DOCDB simple family (application)
DE 19801312 A 19980115; DE 9900069 W 19990114; EP 99906052 A 19990114; JP 2000540580 A 19990114; KR 20007007774 A 20000714; US 61765200 A 20000717