EP 1048079 A1 20001102 - SILICON ON INSULATOR HIGH-VOLTAGE SWITCH
Title (en)
SILICON ON INSULATOR HIGH-VOLTAGE SWITCH
Title (de)
SOI-HOCHSPANNUNGSSCHALTER
Title (fr)
INTERRUPTEUR A HAUTE TENSION A SILICIUM SUR ISOLANT
Publication
Application
Priority
- DE 9803592 W 19981207
- DE 19800647 A 19980109
Abstract (en)
[origin: DE19800647C1] The SOI (semiconductor-on-insulator) switch has a drift zone (11) of given conductivity within the drain zone (2,3) between a gate electrode (6) and a drain electrode (7,D) of the FET structure, with vertical troughs (8) formed in the drift zone and filled with semiconductor material (9,10) of opposite type. The vertical troughs may be filled with a polycrystalline silicon which is doped with a material of opposite conductivity type to the drift zone, with doping of the surrounding area by diffusion. The troughs may be provided in a grid structure.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H03K 17/10 (2006.01)
CPC (source: EP US)
H01L 29/0619 (2013.01 - EP US); H01L 29/0634 (2013.01 - EP US); H01L 29/404 (2013.01 - EP US); H01L 29/66674 (2013.01 - EP US); H01L 29/66681 (2013.01 - EP US); H01L 29/7394 (2013.01 - EP US); H01L 29/7824 (2013.01 - EP US); H01L 29/402 (2013.01 - EP US); H03K 17/102 (2013.01 - EP US)
Citation (search report)
See references of WO 9935695A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
DE 19800647 C1 19990527; EP 1048079 A1 20001102; JP 2002501308 A 20020115; US 6445038 B1 20020903; WO 9935695 A1 19990715
DOCDB simple family (application)
DE 19800647 A 19980109; DE 9803592 W 19981207; EP 98965105 A 19981207; JP 2000527979 A 19981207; US 60000400 A 20000927