EP 1048082 A1 20001102 - CIRCUITRY WITH AT LEAST ONE CAPACITOR AND PROCESS FOR PRODUCING THE SAME
Title (en)
CIRCUITRY WITH AT LEAST ONE CAPACITOR AND PROCESS FOR PRODUCING THE SAME
Title (de)
SCHALTUNGSSTRUKTUR MIT MINDESTENS EINEM KONDENSATOR UND VERFAHREN ZU DESSEN HERSTELLUNG
Title (fr)
CIRCUITERIE COMPRENANT AU MOINS UN CONDENSATEUR, ET PRODUCTION
Publication
Application
Priority
- DE 9802507 W 19980826
- DE 19750148 A 19971112
Abstract (en)
[origin: WO9925026A1] A capacitor is formed in a substrate, in particular made of silicon, of which the main surface has main pores of which the depth exceeds the diameter and whose side walls have side pores with a diameter smaller than that of the main pores by at least one factor 10. The surface of the main pores and side pores is provided with a dielectric layer and a conducting layer. The main pores and the side pores cause the surface to be enlarged, making it possible to produce a capacitor with a specific capacity of between 50 and 500 mu F V/mm<3>.
IPC 1-7
IPC 8 full level
H01L 21/3063 (2006.01); H01L 21/334 (2006.01); H01L 21/822 (2006.01); H01L 27/04 (2006.01); H01L 29/92 (2006.01); H01L 21/02 (2006.01)
CPC (source: EP KR)
H01L 21/3063 (2013.01 - EP); H01L 29/66181 (2013.01 - EP); H01L 29/94 (2013.01 - KR); H01L 28/84 (2013.01 - EP)
Citation (search report)
See references of WO 9925026A1
Designated contracting state (EPC)
AT BE CH DE DK ES FI FR GB IE IT LI NL SE
DOCDB simple family (publication)
WO 9925026 A1 19990520; EP 1048082 A1 20001102; JP 2001523050 A 20011120; KR 20010031974 A 20010416
DOCDB simple family (application)
DE 9802507 W 19980826; EP 98951220 A 19980826; JP 2000519928 A 19980826; KR 20007005084 A 20000510