Global Patent Index - EP 1050064 A2

EP 1050064 A2 20001108 - IMPLANTATION OF RADIOACTIVE ?32 P ATOMS

Title (en)

IMPLANTATION OF RADIOACTIVE ?32 P ATOMS

Title (de)

IMPLANTATION VON RADIOAKTIVEN ?32 P-ATOMEN

Title (fr)

IMPLANTATION D'ATOMES DE P?32 RADIOACTIFS

Publication

EP 1050064 A2 20001108 (DE)

Application

EP 98966654 A 19981221

Priority

  • DE 19757852 A 19971224
  • EP 9808379 W 19981221

Abstract (en)

[origin: DE19757852A1] An installation for doping stents with radio active and non radio active atoms, comprising an ECR ion source with an extraction device, a mass separation device and an irradiation chamber in which the stents are exposed to a selected partial ion beam. Microwaves are injected by means of a tubular piece which is concentric to the plasma chamber and which can be displaced axially. Gaseous additives to the plasma are selected in such a way that a partial beam with a sufficient proportion of radio active atomic or molecular ions can be produced. Stents which are irradiated according to this method in said installation are characterised by a reliably quantified degree of radio activity.

IPC 1-7

H01J 37/32

IPC 8 full level

A61M 36/04 (2006.01); C23C 14/48 (2006.01); G21G 4/08 (2006.01); G21K 5/04 (2006.01); H01J 27/18 (2006.01); H01J 37/08 (2006.01); H01J 37/317 (2006.01); H01J 37/32 (2006.01); H05H 1/46 (2006.01); H05H 3/02 (2006.01); A61N 5/10 (2006.01)

CPC (source: EP US)

G21G 4/08 (2013.01 - EP US); H01J 27/18 (2013.01 - EP US); H01J 37/3171 (2013.01 - EP US); H05H 1/46 (2013.01 - EP US); H05H 3/02 (2013.01 - EP US); A61N 5/1002 (2013.01 - EP US); H01J 2237/0817 (2013.01 - EP US); H01J 2237/31701 (2013.01 - EP US)

Designated contracting state (EPC)

AT BE CH DE DK ES FR GB IT LI LU NL SE

DOCDB simple family (publication)

US 6495842 B1 20021217; AT E235742 T1 20030415; CA 2314953 A1 19990708; DE 19757852 A1 19990708; DE 19757852 C2 20010628; DE 59807685 D1 20030430; EP 1050064 A2 20001108; EP 1050064 B1 20030326; JP 2002500412 A 20020108; JP 3429495 B2 20030722; WO 9934396 A2 19990708; WO 9934396 A3 19991111

DOCDB simple family (application)

US 59711700 A 20000620; AT 98966654 T 19981221; CA 2314953 A 19981221; DE 19757852 A 19971224; DE 59807685 T 19981221; EP 9808379 W 19981221; EP 98966654 A 19981221; JP 2000526943 A 19981221