Global Patent Index - EP 1051747 A1

EP 1051747 A1 20001115 - METHOD FOR PRODUCING INTEGRATED CIRCUITS

Title (en)

METHOD FOR PRODUCING INTEGRATED CIRCUITS

Title (de)

VERFAHREN ZUR HERSTELLUNG INTEGRIERTER SCHALTKREISE

Title (fr)

PROCEDE DE PRODUCTION DE CIRCUITS INTEGRES

Publication

EP 1051747 A1 20001115 (DE)

Application

EP 98965667 A 19981111

Priority

  • DE 19750167 A 19971112
  • EP 9807231 W 19981111

Abstract (en)

[origin: DE19750167A1] The invention relates to a method for producing integrated circuits and components. Previously, substrates were initially made thinner or thin layers were produced according to various methods in order to produce integrated circuits on thin semiconductor layers. Integrated circuits were subsequently produced in a separate process. The inventive method is designed to produce integrated circuits on thin semiconductor layers using traditional wafers as a starting material. A step modifying the quality of the substrate in a layer underneath the components and a step separating the layer containing said components from the rest of the substrate are added at an appropriate stage to known steps in the production of integrated circuits on a substrate. The method can be used especially in silicon CMOS technology. It enables the substrate that is used as a starting material to be re-used. The inventive method also enables individual chips to be detached from the wafer.

IPC 1-7

H01L 21/78; H01L 21/82

IPC 8 full level

B81C 99/00 (2010.01); H01L 21/336 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01)

CPC (source: EP)

B23K 26/40 (2013.01); B23K 26/53 (2015.10); H01L 21/76254 (2013.01); H01L 21/76838 (2013.01); H01L 21/7806 (2013.01); H01L 29/66772 (2013.01); B23K 2103/172 (2018.07)

Citation (search report)

See references of WO 9925020A1

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

DE 19750167 A1 19990527; DE 19750167 B4 20060831; EP 1051747 A1 20001115; WO 9925020 A1 19990520

DOCDB simple family (application)

DE 19750167 A 19971112; EP 9807231 W 19981111; EP 98965667 A 19981111