EP 1055272 A1 20001129 - A GAIN COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
Title (en)
A GAIN COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER
Title (de)
GEWINNGEKOPPELTER HALBLEITERLASER MIT VERTEILTER RÜCKKUPPLUNG
Title (fr)
LASER A SEMI-CONDUCTEUR A RETROACTION REPARTIE ET A COUPLAGE DE GAIN
Publication
Application
Priority
- CA 9901067 W 19991110
- US 20997798 A 19981211
Abstract (en)
[origin: WO0036717A1] A gain coupled DFB semiconductor laser with a high order grating structure is provided. By varying the order and duty cycle of the grating and shape of grooves, a predetermined ratio of gain to index coupling coefficients is obtained. Beneficially the laser includes a multiple quantum well structure with the grating etched directly through the quantum wells of the active region. Deep etching ensures strong gain coupling in the laser while usage of a high order grating reduces index coupling associated with the etching. As a result, a stable, high yield, high power and single mode operation of the DFB laser is achieved. For gratings of a particular order of diffraction, duty cycle, shape of grooves and depth of etching index coupling may be substantially reduced or eliminated. Correspondingly, a purely gain coupled DFB laser may be obtained. It is also easier to manufacture high order DFB lasers because of the larger period of gratings allowing larger fabrication tolerances. A method of producing a complex coupled DFB semiconductor laser having a predetermined ratio of gain to index coupling, and a method of obtaining a purely gain/loss coupled semiconductor DFB laser are also provided.
IPC 1-7
IPC 8 full level
H01S 5/12 (2006.01); H01S 5/223 (2006.01); H01S 5/227 (2006.01); H01S 5/343 (2006.01)
CPC (source: EP)
H01S 5/1228 (2013.01)
Citation (search report)
See references of WO 0036717A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 0036717 A1 20000622; CA 2310604 A1 20000622; EP 1055272 A1 20001129; JP 2002532907 A 20021002
DOCDB simple family (application)
CA 9901067 W 19991110; CA 2310604 A 19991110; EP 99973441 A 19991110; JP 2000588867 A 19991110