Global Patent Index - EP 1055272 A1

EP 1055272 A1 2000-11-29 - A GAIN COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER

Title (en)

A GAIN COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER

Title (de)

GEWINNGEKOPPELTER HALBLEITERLASER MIT VERTEILTER RÜCKKUPPLUNG

Title (fr)

LASER A SEMI-CONDUCTEUR A RETROACTION REPARTIE ET A COUPLAGE DE GAIN

Publication

EP 1055272 A1 (EN)

Application

EP 99973441 A

Priority

  • CA 9901067 W
  • US 20997798 A

Abstract (en)

[origin: WO0036717A1] A gain coupled DFB semiconductor laser with a high order grating structure is provided. By varying the order and duty cycle of the grating and shape of grooves, a predetermined ratio of gain to index coupling coefficients is obtained. Beneficially the laser includes a multiple quantum well structure with the grating etched directly through the quantum wells of the active region. Deep etching ensures strong gain coupling in the laser while usage of a high order grating reduces index coupling associated with the etching. As a result, a stable, high yield, high power and single mode operation of the DFB laser is achieved. For gratings of a particular order of diffraction, duty cycle, shape of grooves and depth of etching index coupling may be substantially reduced or eliminated. Correspondingly, a purely gain coupled DFB laser may be obtained. It is also easier to manufacture high order DFB lasers because of the larger period of gratings allowing larger fabrication tolerances. A method of producing a complex coupled DFB semiconductor laser having a predetermined ratio of gain to index coupling, and a method of obtaining a purely gain/loss coupled semiconductor DFB laser are also provided.

IPC 1-7 (main, further and additional classification)

H01S 5/12

IPC 8 full level (invention and additional information)

H01S 5/12 (2006.01); H01S 5/223 (2006.01); H01S 5/227 (2006.01); H01S 5/343 (2006.01)

CPC (invention and additional information)

H01S 5/1228 (2013.01)

Citation (search report)

See references of WO 0036717A1

Designated contracting state (EPC)

DE FR GB

EPO simple patent family

WO 0036717 A1 20000622; CA 2310604 A1 20000622; EP 1055272 A1 20001129; JP 2002532907 A 20021002

INPADOC legal status


2010-12-22 [18D] DEEMED TO BE WITHDRAWN

- Effective date: 20100601

2006-01-25 [RAP1] TRANSFER OF RIGHTS OF AN EP PUBLISHED APPLICATION

- Owner name: BOOKHAM TECHNOLOGY PLC

2004-10-06 [111Z] REGISTERING OF LICENCES OR OTHER RIGHTS

- Free text: DEFRGB

- Effective date: 20031030

2004-05-19 [RBV] DESIGNATED CONTRACTING STATES (CORRECTION):

- Designated State(s): DE FR GB

2003-08-06 [RAP1] TRANSFER OF RIGHTS OF AN EP PUBLISHED APPLICATION

- Owner name: BOOKHAM TECHNOLOGY PLC

2002-11-06 [17Q] FIRST EXAMINATION REPORT

- Effective date: 20020924

2000-11-29 [17P] REQUEST FOR EXAMINATION FILED

- Effective date: 20000814

2000-11-29 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A1

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

2000-11-29 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO

- Free text: AL;LT;LV;MK;RO;SI