Global Patent Index - EP 1060474 A2

EP 1060474 A2 20001220 - MEMORY CELL ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

Title (en)

MEMORY CELL ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

Title (de)

SPEICHERZELLENANORDNUNG UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN

Title (fr)

ENSEMBLE DE CELLULES DE MEMOIRE ET SON PROCEDE DE FABRICATION

Publication

EP 1060474 A2 20001220 (DE)

Application

EP 99916757 A 19990225

Priority

  • DE 9900517 W 19990225
  • DE 19807920 A 19980225

Abstract (en)

[origin: DE19807920A1] The invention relates to a memory cell arrangement, comprising a number of memory cells (S) arranged in a semiconductor substrate (10) with bit line trenches (1a-1d) running parallel in a longitudinal direction in the main surface of the semiconductor substrate (10). Each bit line trench (1a-1d) is provided with a first conductive area (15a-15d) in the bottom and a second conductive area (20a-20e) of the same conduction type in the top, with a channel area being provided in between in the walls of each trench. Word lines (2a-2c) run in a crosswise direction along the main surface of the semiconductor substrate (10) through certain bit line trenches (1a, 1c, 1d) for controlling the transistors provided there. An additional dopant is introduced into the trench walls of the bit line trenches (1a-1d) situated between the word lines (2a-2c) in order to increase the corresponding transistor cutoff voltage for preventing leakage currents.

IPC 1-7

G11C 11/00

IPC 8 full level

H01L 21/8246 (2006.01); H01L 27/112 (2006.01)

CPC (source: EP KR US)

H01L 29/78 (2013.01 - KR); H10B 20/00 (2023.02 - EP US); H10B 20/40 (2023.02 - EP US)

Citation (search report)

See references of WO 9944204A2

Designated contracting state (EPC)

DE FR GB IT

DOCDB simple family (publication)

DE 19807920 A1 19990902; EP 1060474 A2 20001220; JP 2002505516 A 20020219; KR 100604180 B1 20060725; KR 20010041278 A 20010515; US 6472696 B1 20021029; WO 9944204 A2 19990902; WO 9944204 A3 19991014

DOCDB simple family (application)

DE 19807920 A 19980225; DE 9900517 W 19990225; EP 99916757 A 19990225; JP 2000533875 A 19990225; KR 20007009376 A 20000824; US 64576300 A 20000825