EP 1060517 A1 20001220 - BIPOLAR TRANSISTOR WITH AN INSULATED GATE ELECTRODE

Title (en)

BIPOLAR TRANSISTOR WITH AN INSULATED GATE ELECTRODE

Title (de)

BIPOLARTRANSISTOR MIT ISOLIERTER GATEELEKTRODE

Title (fr)

TRANSISTOR BIPOLAIRE AVEC ELECTRODE DE GRILLE ISOLEE

Publication

EP 1060517 A1 20001220 (DE)

Application

EP 99904672 A 19990225

Priority

CH 9900086 W 19990225
DE 19808154 A 19980227
DE 19823170 A 19980523

Abstract (en)

[origin: WO9944240A1] The invention relates to an IGBT (Insulated Gate Bipolar Transistor) which is simple to produce but still switches on homogeneously. To this end, the inventive transistor does not have any gate fingers and starting from the gate terminal, the gate current in the IGBT chip is transmitted directly to the IGBT unit cells via the polysilicon layers of the gate electrodes.

IPC 1-7

H01L 29/739; H01L 23/485

IPC 8 full level

H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)

CPC (source: EP US)

H01L 23/4824 (2013.01 - EP US); H01L 29/423 (2013.01 - EP US); H01L 29/7395 (2013.01 - EP US); H01L 29/7397 (2013.01 - EP US); H01L 2224/0603 (2013.01 - EP); H01L 2224/13028 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US)

C-Set (source: EP US)

H01L 2924/13055 + H01L 2924/00

Citation (examination)

US 5539244 A 19960723 - MORI MUTSUHIRO [JP], et al
DE 19512799 A1 19961010 - SIEMENS AG [DE]
EP 0668616 A2 19950823 - MITSUBISHI ELECTRIC CORP [JP]
LIN H C ET AL: "Effect of silicon-gate resistance on the frequency response of MOS transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-22, no. 5, May 1975 (1975-05-01), USA, pages 255 - 264
SARASWAT K C ET AL: "Effect of scaling of interconnections on the time delay of VLSI circuits", IEEE TRANSACTIONS ON ELECTRON DEVICES, vol. ED-29, no. 4, April 1982 (1982-04-01), USA, pages 645 - 650
COGAN A ET AL: "Very large-area, high-power, high-voltage DMOS transistor", PROCEEDINGS OF THE 37TH IEEE ELECTRONIC COMPONENTS CONFERENCE 1987, 11 May 1987 (1987-05-11) - 13 May 1987 (1987-05-13), New York, NY, USA, pages 465 - 467
STEFAN LINDER: "POWER SEMICONDUCTORS", 2006, EPFL PRESS, LAUSANNE, SCHWEIZ, ISBN: 2-940222-09-6
See also references of WO 9944240A1

Designated contracting state (EPC)

DE FR GB IT

DOCDB simple family (publication)

WO 9944240 A1 19990902; CN 1183603 C 20050105; CN 1292153 A 20010418; EP 1060517 A1 20001220; JP 2002505525 A 20020219; US 6576936 B1 20030610

DOCDB simple family (application)

CH 9900086 W 19990225; CN 99803384 A 19990225; EP 99904672 A 19990225; JP 2000533906 A 19990225; US 62283900 A 20001010