EP 1060517 A1 20001220 - BIPOLAR TRANSISTOR WITH AN INSULATED GATE ELECTRODE
Title (en)
BIPOLAR TRANSISTOR WITH AN INSULATED GATE ELECTRODE
Title (de)
BIPOLARTRANSISTOR MIT ISOLIERTER GATEELEKTRODE
Title (fr)
TRANSISTOR BIPOLAIRE AVEC ELECTRODE DE GRILLE ISOLEE
Publication
Application
Priority
- CH 9900086 W 19990225
- DE 19808154 A 19980227
- DE 19823170 A 19980523
Abstract (en)
[origin: WO9944240A1] The invention relates to an IGBT (Insulated Gate Bipolar Transistor) which is simple to produce but still switches on homogeneously. To this end, the inventive transistor does not have any gate fingers and starting from the gate terminal, the gate current in the IGBT chip is transmitted directly to the IGBT unit cells via the polysilicon layers of the gate electrodes.
IPC 1-7
IPC 8 full level
H01L 23/48 (2006.01); H01L 23/482 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 23/4824 (2013.01 - EP US); H01L 29/423 (2013.01 - EP US); H01L 29/7395 (2013.01 - EP US); H01L 29/7397 (2013.01 - EP US); H01L 2224/0603 (2013.01 - EP); H01L 2224/13028 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/13055 (2013.01 - EP US)
Citation (search report)
See references of WO 9944240A1
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 9944240 A1 19990902; CN 1183603 C 20050105; CN 1292153 A 20010418; EP 1060517 A1 20001220; JP 2002505525 A 20020219; US 6576936 B1 20030610
DOCDB simple family (application)
CH 9900086 W 19990225; CN 99803384 A 19990225; EP 99904672 A 19990225; JP 2000533906 A 19990225; US 62283900 A 20001010