Global Patent Index - EP 1062685 A1

EP 1062685 A1 2000-12-27 - INTEGRATED LARGE AREA MICROSTRUCTURES AND MICROMECHANICAL DEVICES

Title (en)

INTEGRATED LARGE AREA MICROSTRUCTURES AND MICROMECHANICAL DEVICES

Title (de)

INTEGRIERTE GRO FLÄCHIGE MIKROSTRUKTUREN UND MICROMECHANISCHE ANORDNUNGEN

Title (fr)

MICROSTRUCTURES DE GRANDE SUPERFICIE ET DISPOSITIFS MICROMECANIQUES INTEGRES

Publication

EP 1062685 A1 (EN)

Application

EP 99905434 A

Priority

  • US 9900783 W
  • US 7156998 P

Abstract (en)

[origin: WO9936948A1] Deep reactive ion etching creates a single mask MEMS structure 20-50 micrometer deep on the top surface of the wafer. Thereafter, a bottom surface etch cooperates with trenches formed in the MEMS structure to provide through trenches which release large area structures (86) of arbitrary shape and having a thickness up to that of the wafer. The releases structure is supported in the wafer by MEMS support beams (102, 104) and motion is detected and affected by MEMS sensors and actuators, respectively.

IPC 1-7 (main, further and additional classification)

H01L 21/00; H01L 21/30

IPC 8 full level (invention and additional information)

B81C 1/00 (2006.01); B81B 3/00 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01)

CPC (invention and additional information)

B81C 1/00484 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0136 (2013.01)

Citation (search report)

See references of WO 9936948A1

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

EPO simple patent family

WO 9936948 A1 19990722; EP 1062685 A1 20001227; JP 2002509808 A 20020402

INPADOC legal status


2005-03-16 [18D] DEEMED TO BE WITHDRAWN

- Ref Legal Event Code: 18D

- Effective date: 20040803

2000-12-27 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 20000517

2000-12-27 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE