EP 1062685 A1 20001227 - INTEGRATED LARGE AREA MICROSTRUCTURES AND MICROMECHANICAL DEVICES
Title (en)
INTEGRATED LARGE AREA MICROSTRUCTURES AND MICROMECHANICAL DEVICES
Title (de)
INTEGRIERTE GRO FLÄCHIGE MIKROSTRUKTUREN UND MICROMECHANISCHE ANORDNUNGEN
Title (fr)
MICROSTRUCTURES DE GRANDE SUPERFICIE ET DISPOSITIFS MICROMECANIQUES INTEGRES
Publication
Application
Priority
- US 9900783 W 19990114
- US 7156998 P 19980115
Abstract (en)
[origin: WO9936948A1] Deep reactive ion etching creates a single mask MEMS structure 20-50 micrometer deep on the top surface of the wafer. Thereafter, a bottom surface etch cooperates with trenches formed in the MEMS structure to provide through trenches which release large area structures (86) of arbitrary shape and having a thickness up to that of the wafer. The releases structure is supported in the wafer by MEMS support beams (102, 104) and motion is detected and affected by MEMS sensors and actuators, respectively.
IPC 1-7
IPC 8 full level
B81B 3/00 (2006.01); B81C 1/00 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01)
CPC (source: EP)
B81C 1/00484 (2013.01); B81B 2203/0118 (2013.01); B81B 2203/0136 (2013.01)
Citation (search report)
See references of WO 9936948A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
WO 9936948 A1 19990722; EP 1062685 A1 20001227; JP 2002509808 A 20020402
DOCDB simple family (application)
US 9900783 W 19990114; EP 99905434 A 19990114; JP 2000540567 A 19990114