EP 1062692 A1 20001227 - DEVICES FORMABLE BY LOW TEMPERATURE DIRECT BONDING
Title (en)
DEVICES FORMABLE BY LOW TEMPERATURE DIRECT BONDING
Title (de)
DURCH DIREKTES NIEDERTEMPERATURBONDEN HERGESTELLTE ANORDNUNGEN
Title (fr)
DISPOSITIFS POUVANT ETRE FORMES PAR PROCEDE DE LIAISON DIRECTE A BASSE TEMPERATURE
Publication
Application
Priority
- US 9905066 W 19990309
- US 3683898 A 19980309
- US 3772398 A 19980309
- US 3681598 A 19980309
Abstract (en)
[origin: WO9946809A1] A semiconductor device includes a laterally extending semiconductor base (82, 96), a buffer (83) adjacent the base and having a first conductivity type dopant, and a laterally extending emitter (85) adjacent the buffer and opposite the base and having a second conductivity type dopant. The buffer (83) is thin and has a fist conductivity type dopant concentration greater than a second conductivity type dopant concentration in adjacent emitter portions to provide a negative temperature coefficient for current gain and a positive temperature coefficient for forward voltage for the device. The buffer may be silicon or germanium. A low temperature bonded interface (103) may be between the emitter and the buffer or the buffer and the base. Another embodiment of a device may include a laterally extending localized lifetime killing portion (92, 102) between oppositely doped first and second laterally extending portions. The localized lifetime killing portion may comprise a plurality of laterally confined and laterally space apart lifetime killing regions. Another device may include one or more PN junctions.
IPC 1-7
IPC 8 full level
H01L 21/04 (2006.01); H01L 21/18 (2006.01); H01L 21/322 (2006.01); H01L 21/331 (2006.01); H01L 21/332 (2006.01); H01L 21/335 (2006.01); H01L 21/336 (2006.01); H01L 27/04 (2006.01); H01L 29/739 (2006.01); H01L 29/749 (2006.01); H01L 29/78 (2006.01); H01L 29/80 (2006.01)
CPC (source: EP KR)
H01L 21/187 (2013.01 - EP KR); H01L 29/66068 (2013.01 - EP KR); H01L 29/66348 (2013.01 - EP KR); H01L 29/66363 (2013.01 - EP KR); H01L 29/66424 (2013.01 - EP KR); H01L 29/1608 (2013.01 - EP)
Citation (search report)
See references of WO 9946809A1
Designated contracting state (EPC)
CH DE FR GB IT LI NL
DOCDB simple family (publication)
WO 9946809 A1 19990916; EP 1062692 A1 20001227; JP 2002507058 A 20020305; KR 20010041822 A 20010525
DOCDB simple family (application)
US 9905066 W 19990309; EP 99912328 A 19990309; JP 2000536101 A 19990309; KR 20007010106 A 20000909