Global Patent Index - EP 1062693 A1

EP 1062693 A1 2000-12-27 - SEMICONDUCTOR FABRICATION METHOD AND SYSTEM

Title (en)

SEMICONDUCTOR FABRICATION METHOD AND SYSTEM

Title (de)

VERFAHREN UND VORRICHTUNG ZUR HALBLEITERHERSTELLUNG

Title (fr)

SYSTEME ET PROCEDE DE FABRICATION DE SEMI-CONDUCTEURS

Publication

EP 1062693 A1 (EN)

Application

EP 00904399 A

Priority

  • US 0001164 W
  • US 23364099 A

Abstract (en)

[origin: US6057245A] A gas phase planarization process for semiconductor wafers. The present invention comprises a system and method of dry planarization for a semiconductor wafer. For instance, the present invention includes a system adapted to effectively remove all, or a portion of, a layer of dielectric material of a semiconductor wafer through the application of dry abrasion and dry chemistry. As such, a present invention system flattens out height differences of the dielectric material, since high areas of topography are removed faster than low areas. Specifically, one embodiment of the present invention utilizes a dry abrasive polishing pad to abrade the desired surface of the semiconductor wafer within a vacuum planarization chamber. As a result of abrading the surface, the abrasive polishing pad breaks the chemical bonds of a thin layer of the dielectric surface material. Once the chemical bonds are broken, reactive radicals within a plasma gas chemically react with the surface material thereby forming a gaseous species which is highly volatile. In other words, the plasma gas is used to remove previously mechanically polished material from the dielectric layer. Subsequently, the newly formed gaseous species is removed from the vacuum planarization chamber. This process of removing material from the surface of the semiconductor wafer continues until the surface is sufficiently planarized. In this manner, the present invention provides a dry process for planarizing a surface of a semiconductor wafer.

IPC 1-7 (main, further and additional classification)

H01L 21/3105; B24B 1/00

IPC 8 full level (invention and additional information)

H01L 21/3205 (2006.01); B24B 7/22 (2006.01); B24D 13/14 (2006.01); H01L 21/304 (2006.01); H01L 21/3105 (2006.01)

CPC (invention and additional information)

B24B 7/228 (2013.01); B24D 13/14 (2013.01); H01L 21/31053 (2013.01)

Citation (search report)

See references of WO 0044035A1

Designated contracting state (EPC)

DE FR GB

EPO simple patent family

US 6057245 A 20000502; AU 2616500 A 20000807; EP 1062693 A1 20001227; JP 2002535846 A 20021022; US 6267076 B1 20010731; US 6380092 B1 20020430; WO 0044035 A1 20000727

INPADOC legal status


2003-02-26 [18W] WITHDRAWN

- Ref Legal Event Code: 18W

- Effective date: 20021219

2001-03-28 [17P] REQUEST FOR EXAMINATION FILED

- Ref Legal Event Code: 17P

- Effective date: 20010129

2000-12-27 [AK] DESIGNATED CONTRACTING STATES:

- Ref Legal Event Code: AK

- Designated State(s): DE FR GB