EP 1063710 A1 20001227 - Semiconductor light emitting device
Title (en)
Semiconductor light emitting device
Title (de)
Lichtemittierende Halbleitervorrichtung
Title (fr)
Dispositif semi-conducteur émetteur de lumière
Publication
Application
Priority
JP 15761699 A 19990604
Abstract (en)
A semiconductor light emitting device using nitride III-V compound semiconductors is improved to reduce the threshold current density with almost no increase of the operation voltage. In a GaN semiconductor laser as one version thereof, the p-type cladding layer (10) is made of two or more semiconductor layers (10a, 10b) different in band gap, and a part (10a) of the p-type cladding layer (10) near one of its boundaries nearer to the active layer is made of a semiconductor layer having a larger band gap than that of the remainder part (10b). More specifically, in a AlGaN/GaN/GaInN SCH-structured GaN semiconductor laser, a p-type AlGaN cladding layer (10) is made of a p-type Alx1Ga1-x1N layer (10a) in contact with a p- type GaN optical guide layer (9), and a p-type Alx2Ga1-x2N layer (10b) overlying the p-type Alx1Ga1-x1N layer (10a) (where 0≤x2<x1≤1). <IMAGE>
IPC 1-7
IPC 8 full level
H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01S 5/00 (2006.01); H01S 5/20 (2006.01); H01S 5/323 (2006.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01)
CPC (source: EP US)
H01L 33/32 (2013.01 - EP US); H01S 5/20 (2013.01 - EP US); H01S 5/2004 (2013.01 - EP US); H01S 5/3211 (2013.01 - EP US); H01S 5/32341 (2013.01 - EP US)
Citation (search report)
- [X] EP 0772249 A2 19970507 - NICHIA KAGAKU KOGYO KK [JP]
- [X] US 5670798 A 19970923 - SCHETZINA JAN FREDERICK [US]
- [A] EP 0890997 A2 19990113 - SHARP KK [JP]
- [A] EP 0716457 A2 19960612 - NICHIA KAGAKU KOGYO KK [JP]
- [X] NAKAMURA S: "GAN-BASED BLUE/GREEN SEMICONDUCTOR LASER", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS,US,IEEE SERVICE CENTER, vol. 3, no. 2, 1 April 1997 (1997-04-01), pages 435 - 442, XP000735941, ISSN: 1077-260X
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 1063710 A1 20001227; EP 1063710 B1 20040818; DE 60013039 D1 20040923; DE 60013039 T2 20050908; JP 2000349397 A 20001215; JP 4750238 B2 20110817; KR 100634273 B1 20061016; KR 20010007215 A 20010126; US 6603147 B1 20030805
DOCDB simple family (application)
EP 00401569 A 20000605; DE 60013039 T 20000605; JP 15761699 A 19990604; KR 20000030454 A 20000602; US 58725400 A 20000602