Global Patent Index - EP 1064680 A1

EP 1064680 A1 20010103 - WIRING METHOD FOR PRODUCING A VERTICAL, INTEGRATED CIRCUIT STRUCTURE AND VERTICAL, INTEGRATED CIRCUIT STRUCTURE

Title (en)

WIRING METHOD FOR PRODUCING A VERTICAL, INTEGRATED CIRCUIT STRUCTURE AND VERTICAL, INTEGRATED CIRCUIT STRUCTURE

Title (de)

VERDRAHTUNGSVERFAHREN ZUR HERSTELLUNG EINER VERTIKALEN INTEGRIERTEN SCHALTUNGSSTRUKTUR UND VERTIKALE INTEGRIERTE SCHALTUNGSSTRUKTUR

Title (fr)

PROCEDE DE CABLAGE POUR REALISER UNE STRUCTURE DE CIRCUIT INTEGREE VERTICALE, ET STRUCTURE DE CIRCUIT INTEGREE VERTICALE OBTENUE

Publication

EP 1064680 A1 20010103 (DE)

Application

EP 99924682 A 19990325

Priority

  • DE 9900906 W 19990325
  • DE 19813239 A 19980326

Abstract (en)

[origin: WO9949509A1] The invention relates to a wiring method for vertical system integration. According to the method described in the invention, the individual component layers in different substrates are first processed independently of each other in accordance with the state of the art (DE 44 33 846 A1) and then assembled. First, via holes (9) are opened up on the front side of the top substrate which preferably pass through all the component layers present. The top substrate (0) is then thinned from the rear side as far as the via holes (9), after which a fully processed bottom substrate (12) is joined to the top substrate (0). Next, the via holes (9) are extended (so-called interchip via holes) as far as a metallized level of the bottom substrate and the contact between the top and bottom substrates is established (wiring). According to the present invention the wiring is carried out in a way which allows for a maximum density of the vertical contacts between the metallisation of the top substrate (0) and that of the bottom substrate (12).

IPC 1-7

H01L 21/822; H01L 21/98; H01L 27/06; H01L 23/48

IPC 8 full level

H01L 21/768 (2006.01); H01L 21/822 (2006.01); H01L 21/98 (2006.01); H01L 23/48 (2006.01); H01L 25/065 (2006.01); H01L 27/06 (2006.01)

CPC (source: EP US)

H01L 21/76898 (2013.01 - EP US); H01L 21/8221 (2013.01 - EP US); H01L 23/481 (2013.01 - EP US); H01L 25/0657 (2013.01 - EP US); H01L 25/50 (2013.01 - EP US); H01L 27/0688 (2013.01 - EP US); H01L 2225/06513 (2013.01 - EP US); H01L 2225/06541 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)

Citation (search report)

See references of WO 9949509A1

Designated contracting state (EPC)

AT BE DE FR GB

DOCDB simple family (publication)

WO 9949509 A1 19990930; DE 19813239 C1 19991223; EP 1064680 A1 20010103; JP 2002508590 A 20020319; US 6448174 B1 20020910

DOCDB simple family (application)

DE 9900906 W 19990325; DE 19813239 A 19980326; EP 99924682 A 19990325; JP 2000538382 A 19990325; US 64701200 A 20001005