EP 1064682 A1 20010103 - DRAM-CELL ARRANGEMENT AND METHOD OF PRODUCTION THEREOF
Title (en)
DRAM-CELL ARRANGEMENT AND METHOD OF PRODUCTION THEREOF
Title (de)
DRAM-ZELLENANORDNUNG UND VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
ENSEMBLE DE CELLULES DE MEMOIRE VIVE DYNAMIQUE ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 9900510 W 19990225
- DE 19811882 A 19980318
Abstract (en)
[origin: DE19811882A1] The DRAM cell arrangement has a semiconductor structure (Sat) in which are arranged a first source/drain region and a channel region of at least one vertical MOS transistor of a memory cell. The source/drain region and the channel region are bounded at least by a first edge of the semiconductor structure. At least the first edge of the semiconductor structure is provided with a gate dielectric (GDa) at least in the region of the channel region of the MOS transistor. A gate electrode (Gaa) lies against the dielectric. The gate electrode is electrically connected to a first word line. An element which prevents formation of a channel is bounded by a second edge of the structure. A second word line runs along the second edge of the semiconductor structure. The first source/drain region of the MOS transistor is electrically connected to a first capacitor electrode of a capacitor. A second capacitor electrode of the capacitor is arranged over the first electrode. The second electrode is electrically connected to a bit line which runs perpendicular to the first word line.
IPC 1-7
IPC 8 full level
H01L 21/8242 (2006.01); H01L 27/108 (2006.01)
CPC (source: EP KR US)
H10B 12/00 (2023.02 - KR); H10B 12/033 (2023.02 - EP US); H10B 12/053 (2023.02 - EP US); H10B 12/34 (2023.02 - EP US); Y10S 257/906 (2013.01 - EP US); Y10S 257/907 (2013.01 - EP US)
Citation (search report)
See references of WO 9948151A1
Designated contracting state (EPC)
DE FR GB IE IT
DOCDB simple family (publication)
DE 19811882 A1 19990923; EP 1064682 A1 20010103; JP 2002507841 A 20020312; KR 100615735 B1 20060825; KR 20010041982 A 20010525; TW 409409 B 20001021; US 6097049 A 20000801; WO 9948151 A1 19990923
DOCDB simple family (application)
DE 19811882 A 19980318; DE 9900510 W 19990225; EP 99916756 A 19990225; JP 2000537263 A 19990225; KR 20007010308 A 20000918; TW 88104172 A 19990317; US 27207799 A 19990318