EP 1064684 A1 20010103 - EDGE TERMINATION FOR A SEMICONDUCTOR COMPONENT, SCHOTTKY DIODE WITH AN END TERMINATION AND METHOD FOR PRODUCING A SCHOTTKY DIODE
Title (en)
EDGE TERMINATION FOR A SEMICONDUCTOR COMPONENT, SCHOTTKY DIODE WITH AN END TERMINATION AND METHOD FOR PRODUCING A SCHOTTKY DIODE
Title (de)
RANDABSCHLUSS FÜR EIN HALBLEITERBAUELEMENT, SCHOTTKY-DIODE MIT EINEM RANDABSCHLUSS UND VERFAHREN ZUR HERSTELLUNG EINER SCHOTTKY-DIODE
Title (fr)
BORDURE TERMINALE POUR UN COMPOSANT A SEMI-CONDUCTEUR, DIODE A BARRIERE DE SCHOTTKY DOTEE D'UNE BORDURE TERMINALE ET PROCEDE DE FABRICATION D'UNE DIODE A BARRIERE DE SCHOTTKY
Publication
Application
Priority
- DE 0000024 W 20000103
- DE 19901385 A 19990115
Abstract (en)
[origin: WO0042661A1] An edge termination for a semiconductor component comprising a semiconductor body (1) containing silicon carbide. The edge termination has at least one diode chain (11) that is insulated from the semiconductor body (1) and provided with a plurality of semiconductor layers (12) having a respectively alternating type of conductivity.
IPC 1-7
IPC 8 full level
H01L 21/329 (2006.01); H01L 29/06 (2006.01); H01L 29/24 (2006.01); H01L 29/40 (2006.01); H01L 29/47 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01)
CPC (source: EP US)
H01L 29/1608 (2013.01 - EP US); H01L 29/405 (2013.01 - EP US); H01L 29/872 (2013.01 - EP US)
Citation (search report)
See references of WO 0042661A1
Designated contracting state (EPC)
AT DE FR GB IE IT
DOCDB simple family (publication)
WO 0042661 A1 20000720; EP 1064684 A1 20010103; JP 2002535839 A 20021022; US 6320205 B1 20011120
DOCDB simple family (application)
DE 0000024 W 20000103; EP 00904821 A 20000103; JP 2000594159 A 20000103; US 66357000 A 20000915