EP 1068646 A1 20010117 - METHOD FOR DOPING ONE SIDE OF A SEMICONDUCTOR BODY
Title (en)
METHOD FOR DOPING ONE SIDE OF A SEMICONDUCTOR BODY
Title (de)
VERFAHREN ZUR EINSEITIGEN DOTIERUNG EINES HALBLEITERKÖRPERS
Title (fr)
PROCEDE PERMETTANT DE DOPER D'UN SEUL COTE UN DISPOSITIF A SEMI-CONDUCTEUR
Publication
Application
Priority
- DE 19813188 A 19980325
- EP 9902038 W 19990325
Abstract (en)
[origin: DE19813188A1] The invention relates to a method for doping one side of semiconductor bodies, especially of silicon wafers. To this end, a conventional oxide layer (2, 3) is firstly deposited on both the side (DS) of the substrate (1) to be doped and on the side (GS) of a substrate (1) which is not to be doped. Afterwards, a doping layer (4) containing the doping agent is deposited on the oxide layer (3) of the side (DS) which is to be doped. In a diffusion step, the doping agent firstly passes in a uniform manner through the oxide layer (3) located between the substrate (1) and the doped layer (4). The doping agent then penetrates the substrate (1), and produces a uniform doping.
IPC 1-7
IPC 8 full level
H01L 21/223 (2006.01); H01L 21/225 (2006.01); H01L 31/04 (2006.01); H01L 31/18 (2006.01)
CPC (source: EP US)
H01L 21/2256 (2013.01 - EP US); H01L 31/1804 (2013.01 - EP US); Y02E 10/547 (2013.01 - EP US); Y02P 70/50 (2015.11 - EP US); Y10S 438/923 (2013.01 - EP US)
Citation (search report)
See references of WO 9949521A1
Designated contracting state (EPC)
DE ES FR GB IT NL
DOCDB simple family (publication)
DE 19813188 A1 19991007; EP 1068646 A1 20010117; JP 2002508597 A 20020319; US 6448105 B1 20020910; WO 9949521 A1 19990930
DOCDB simple family (application)
DE 19813188 A 19980325; EP 9902038 W 19990325; EP 99914540 A 19990325; JP 2000538392 A 19990325; US 64704600 A 20001122