Global Patent Index - EP 1070157 A1

EP 1070157 A1 20010124 - METHOD FOR REMOVING PHOTORESIST AND PLASMA ETCH RESIDUES

Title (en)

METHOD FOR REMOVING PHOTORESIST AND PLASMA ETCH RESIDUES

Title (de)

VERFAHREN ZUM ENTFERNEN VON PHOTORESIST- UND PLASMAÄTZRÜCKSTÄNDEN

Title (fr)

PROCEDE PERMETTANT DE RETIRER UN PHOTORESIST ET DES RESIDUS DE GRAVURE AU PLASMA

Publication

EP 1070157 A1 20010124 (EN)

Application

EP 98915347 A 19980406

Priority

US 9806907 W 19980406

Abstract (en)

[origin: WO9951796A1] A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant.

IPC 1-7

C23G 1/02; C11D 1/40

IPC 8 full level

C11D 7/32 (2006.01); C11D 3/39 (2006.01); C11D 7/02 (2006.01); C11D 7/06 (2006.01); C11D 7/08 (2006.01); C11D 7/10 (2006.01); C11D 11/00 (2006.01); C23G 1/02 (2006.01); C23G 1/06 (2006.01); G03F 7/42 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)

CPC (source: EP KR)

C11D 3/3942 (2013.01 - EP); C11D 7/02 (2013.01 - EP); C11D 7/06 (2013.01 - EP); C11D 7/08 (2013.01 - EP); C11D 7/10 (2013.01 - EP); C23G 1/02 (2013.01 - KR); C23G 1/061 (2013.01 - EP); G03F 7/425 (2013.01 - EP); H01L 21/02071 (2013.01 - EP); H01L 21/31116 (2013.01 - EP); C11D 2111/22 (2024.01 - EP)

Designated contracting state (EPC)

BE DE FR GB IE IT NL

DOCDB simple family (publication)

WO 9951796 A1 19991014; AU 6955698 A 19991025; EP 1070157 A1 20010124; EP 1070157 A4 20030212; JP 2002510752 A 20020409; KR 20010042461 A 20010525

DOCDB simple family (application)

US 9806907 W 19980406; AU 6955698 A 19980406; EP 98915347 A 19980406; JP 2000542506 A 19980406; KR 20007011074 A 20001005