Global Patent Index - EP 1071127 A2

EP 1071127 A2 2001-01-24 - High speed simulation method of an oxidation process in a semiconductor device

Title (en)

High speed simulation method of an oxidation process in a semiconductor device

Title (de)

Hochgeschwindigkeits-Simulationsverfahren eines Oxidationsprozesses in einer Halbleitervorrichtung

Title (fr)

Méthode de simulation rapide d'un procédé d'oxidation dans un dispositif semiconducteur

Publication

EP 1071127 A2 (EN)

Application

EP 00115658 A

Priority

JP 20652599 A

Abstract (en)

A process simulation method when an oxide film is formed on a surface of a semiconductor material, is attained by (a) setting of a specified film thickness of an oxide film, and a time interval as a time increment; by (b) incrementing a current time by the time increment; by (c) calculating a surface oxidant concentration at the current time using the oxidant diffusion equation: by (d) calculating the effective film thickness of the oxide film at the specified position at the current time from the surface oxidant concentration; by (e) comparing the effective film thickness and the specified film thickness; and by (f) setting the time increment to a half of the time interval, when the effective film thickness is larger than the specified film thickness. The process simulation method may further include: (g) repeating the steps (b) to (e). Also, the process simulation method may further include: (h) carrying out oxidation reaction rate calculation, production of a new boundary and a deformation calculation, when the effective film thickness is not larger than the specified film thickness. <IMAGE>

IPC 1-7 (main, further and additional classification)

H01L 21/66; G06F 17/50

IPC 8 full level (invention and additional information)

H01L 21/316 (2006.01); G06F 17/50 (2006.01); H01L 21/00 (2006.01)

CPC (invention and additional information)

G06F 17/5018 (2013.01)

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

EPO simple patent family

EP 1071127 A2 20010124; JP 2001035847 A 20010209; JP 3309835 B2 20020729

INPADOC legal status


2003-09-17 [18W] WITHDRAWN

- Effective date: 20030723

2003-05-02 [RAP1] TRANSFER OF RIGHTS OF AN EP PUBLISHED APPLICATION

- Owner name: NEC ELECTRONICS CORPORATION

2001-01-24 [AK] DESIGNATED CONTRACTING STATES:

- Kind Code of Ref Document: A2

- Designated State(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

2001-01-24 [AX] REQUEST FOR EXTENSION OF THE EUROPEAN PATENT TO

- Free text: AL;LT;LV;MK;RO;SI