EP 1071127 A2 20010124 - High speed simulation method of an oxidation process in a semiconductor device
Title (en)
High speed simulation method of an oxidation process in a semiconductor device
Title (de)
Hochgeschwindigkeits-Simulationsverfahren eines Oxidationsprozesses in einer Halbleitervorrichtung
Title (fr)
Méthode de simulation rapide d'un procédé d'oxidation dans un dispositif semiconducteur
Publication
Application
Priority
JP 20652599 A 19990721
Abstract (en)
A process simulation method when an oxide film is formed on a surface of a semiconductor material, is attained by (a) setting of a specified film thickness of an oxide film, and a time interval as a time increment; by (b) incrementing a current time by the time increment; by (c) calculating a surface oxidant concentration at the current time using the oxidant diffusion equation: by (d) calculating the effective film thickness of the oxide film at the specified position at the current time from the surface oxidant concentration; by (e) comparing the effective film thickness and the specified film thickness; and by (f) setting the time increment to a half of the time interval, when the effective film thickness is larger than the specified film thickness. The process simulation method may further include: (g) repeating the steps (b) to (e). Also, the process simulation method may further include: (h) carrying out oxidation reaction rate calculation, production of a new boundary and a deformation calculation, when the effective film thickness is not larger than the specified film thickness. <IMAGE>
IPC 1-7
IPC 8 full level
G06F 17/50 (2006.01); H01L 21/00 (2006.01); H01L 21/316 (2006.01)
CPC (source: EP)
G06F 30/23 (2020.01)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE
DOCDB simple family (publication)
EP 1071127 A2 20010124; JP 2001035847 A 20010209; JP 3309835 B2 20020729
DOCDB simple family (application)
EP 00115658 A 20000720; JP 20652599 A 19990721