Title (en)

Method of manufacturing cold cathode field emission device and method of manufacturing cold cathode field emission display

Title (de)

Verfahren zur Herstellung eines Kaltkathodenfeldemitters und einer Anzeigevorrichtung

Title (fr)

Procédé de fabrication d'un émetteur de champ à cathode froide et d'un dispositif d'affichage

Publication

EP 1073085 A3 20030409 (EN)

Application

EP 00402144 A 20000727

Priority

JP 21547999 A 19990729

Abstract (en)

[origin: EP1073085A2] A method of manufacturing a cold cathode field emission device, which comprises the steps of; (A) forming a cathode electrode (11) on a support (10), (B) forming an insulating layer (12) on the cathode electrode (11) and the support (10), (C) forming a gate electrode (13A) on the insulating layer (12), (D) forming an opening portion (14) having a bottom portion where the cathode electrode (11) is exposed, at least in the insulating layer (12), (E) forming an electron emitting electrode composed of an electric conductive composite (17) containing electric conductive particles and a binder on the cathode electrode (11) exposed in the bottom portion of the opening portion (14), and (F) removing the binder in a surface layer portion of the electron emitting electrode to expose the electric conductive particles on the surface of the electron emitting electrode (17A). <IMAGE>

IPC 1-7

H01J 9/02

IPC 8 full level

H01J 1/304 (2006.01); H01J 9/02 (2006.01); H01J 29/04 (2006.01); H01J 31/12 (2006.01)

CPC (source: EP)

H01J 9/025 (2013.01)

Citation (search report)

• [E] EP 1073090 A2 20010131 - ILJIN NANOTECH CO LTD [KR]
• [A] US 5695378 A 19971209 - HECKER JR PHIL E [US], et al
• [A] EP 0905737 A1 19990331 - ISE ELECTRONICS CORP [JP]
• [A] WO 9747020 A1 19971211 - CANDESCENT TECH CORP [US]
• [A] EP 0712146 A1 19960515 - COMMISSARIAT ENERGIE ATOMIQUE [FR]
• [A] EP 0724280 A1 19960731 - NEC CORP [JP]
• [A] EP 0834897 A1 19980408 - SGS THOMSON MICROELECTRONICS [IT]
• [A] EP 0779642 A1 19970618 - SGS THOMSON MICROELECTRONICS [IT]
• [X] GEIS M W ET AL: "DIAMOND GRIT-BASED FIELD EMISSION CATHODES", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, VOL. 18, NR. 12, PAGE(S) 595-598, ISSN: 0741-3106, XP000727110

Designated contracting state (EPC)

AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

DOCDB simple family (publication)

EP 1073085 A2 20010131; EP 1073085 A3 20030409; JP 2001043790 A 20010216; KR 20010039768 A 20010515

DOCDB simple family (application)

EP 00402144 A 20000727; JP 21547999 A 19990729; KR 20000043815 A 20000728